Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

著录项

• 来源
  《Journal of Crystal Growth》 |2014年第1期|133-136|共4页
• 作者

  Y. Miyamura; H. Harada; K. Jiptner; J. Chen; R.R. Prakash; S. Nakano; B. Gao; K. Kakimoto; T. Sekiguchi;

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• 作者单位

  National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan;

  National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan;

  National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan;

  National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan;

  National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan,Graduate School of Pure & Applied Sciences, University of Tsukuba, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan;

  Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;

  Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;

  Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;

  National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan,Graduate School of Pure & Applied Sciences, University of Tsukuba, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Directional solidification; A2. Growth from melt; B1. Semiconducting silicon; B3. Solar cells;

  机译：A1。定向凝固;A2。从熔体中生长;B1。半导体硅;B3。太阳能电池;