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首页> 外文期刊>Journal of Crystal Growth >Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
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Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy

机译：等离子体辅助分子束外延生长AlGaN / GaN HEMT结构中的应变的测量

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摘要

The AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on the (0001) HVPE bulk GaN substrates using plasma-assisted molecular-beam epitaxy (PAMBE). The AlGaN layers of 12% or 21% Al were grown to nominal 20 nm thickness after which the 3 nm thick GaN cap was added. High-resolution X-ray diffraction (HRXRD) and TEM measurements were used to determine crystallographic quality, composition and strain distribution in these samples. It was shown that 12% Al samples are uniform while 21% samples exhibit large compositional nonuniformity. The mismatch strain is localized close to interface on GaN side while on AlGaN side penetrates deeply, in more nonuniform way, especially for higher Al content sample.
机译：使用等离子辅助分子束外延（PAMBE）在（0001）HVPE体GaN衬底上生长AlGaN / GaN高电子迁移率晶体管（HEMT）结构。将Al含量为12％或21％的AlGaN层生长到标称的20 nm厚度，然后添加3 nm厚的GaN帽盖。高分辨率X射线衍射（HRXRD）和TEM测量用于确定这些样品的晶体学质量，组成和应变分布。结果表明，12％的Al样品是均匀的，而21％的样品表现出较大的组成不均匀性。失配应变以更不均匀的方式局限在GaN侧的界面附近，而在AlGaN侧更深地穿透，特别是对于铝含量较高的样品。

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  • 来源
    《Journal of Crystal Growth》 |2014年第1期|355-358|共4页
  • 作者

    J. Borysiuk; K. Sobczak; A. Wierzbicka; E. Jezierska; K. Klosek; M. Sobanska; Z.R. Zytkiewicz; B. Lucznik;

  • 作者单位

    Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;

    Faculty of Materials Science and Engineering, Warsaw University of Technology, Wotoska 141, 02-507 Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Characterization; A3. Molecular beam epitaxy; B1. Nitrides; B3. High electron mobility transistors;

    机译：A1。表征;A3。分子束外延;B1。氮化物;B3。高电子迁移率晶体管;

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