Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

著录项

• 来源
  《Journal of Crystal Growth》 |2012年第c期|p.35-41|共7页
• 作者

  Jose M. Manuel; Francisco M. Morales; Rafael Garcia; Rolf Aidam; Lutz Kirste; Oliver Ambacher;

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• 作者单位

  Departamento de Ciencia de los Materiales e IMy QI, Universidad de Cadiz, 11510 Puerto Real, Cadiz, Spain;

  Departamento de Ciencia de los Materiales e IMy QI, Universidad de Cadiz, 11510 Puerto Real, Cadiz, Spain;

  Departamento de Ciencia de los Materiales e IMy QI, Universidad de Cadiz, 11510 Puerto Real, Cadiz, Spain;

  Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany;

  Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany;

  Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. High resolution X-ray diffraction; A1. Threading dislocation; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. GaN on Si substrate; B3. High electron mobility transistors;

  机译：A1。高分辨率X射线衍射;A1。螺纹脱位;A1。透射电子显微镜;A3。分子束外延;B1。硅衬底上的GaN;B3。高电子迁移率晶体管;