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首页> 外文期刊>Journal of Crystal Growth >Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications
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Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications

机译：定向固化的单晶硅中种子之间的偏析，沉淀和位错生成，用于光伏应用

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摘要

The generation of structural defects in directionally solidified mono-like silicon on a pavement of seeds has been investigated by synchrotron X-ray imaging, micro-FTIR mapping and electronic techniques. In particular, we analyse the region where the liquid Si penetrates between two seeds and we correlate the segregation and precipitation of impurities with the generation of cascades of dislocations during crystal growth. The solidified silicon grows epitaxially on the seeds without creating any distortion at the interface; however, due to the relative misorientation between the two seeds a highly and inhomogeneously distorted sub-grain boundary is created. Locally distorted zones, in particular linked to precipitates, are detected along and near the sub-grain boundary. The precipitates mainly consist of Si, C, N and 0. Dislocations generated in these distorted zones propagate away from the sub-grain boundary towards the un-melted portions of the seeds, but they are blocked by barriers of precipitates formed at the positions of the initial seed surfaces. Higher in the ingot, bunches of dislocations propagate and multiply in the bulk.
机译：已经通过同步加速器X射线成像，微FTIR映射和电子技术研究了种子在人行道上定向凝固的单晶硅中结构缺陷的产生。特别地，我们分析了液态硅渗透到两个晶种之间的区域，并将晶体生长过程中位错级联的产生与杂质的偏析和沉淀相关联。固化的硅在种子上外延生长，而不会在界面处产生任何变形；但是，由于两个种子之间的相对方向不正确，因此创建了高度不均匀扭曲的子晶粒边界。沿着亚晶粒边界及其附近检测到局部变形的区域，特别是与沉淀物相关的区域。析出物主要由Si，C，N和0组成。在这些变形区中产生的位错从亚晶粒边界向着种子的未熔化部分传播，但它们被形成在析出物位置的析出物阻挡层所阻挡。初始种子表面。在晶锭中较高的位置上，成串的位错在主体中扩散并繁殖。

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  • 来源
    《Journal of Crystal Growth》 |2014年第1期|397-403|共7页
  • 作者

    M.G. Tsoutsouva; V.A. Oliveira; D. Camel; T.N. Tran Thi; J. Baruchel; B. Marie; T.A. Lafford;

  • 作者单位

    European Synchrotron Radiation Facility, 6 Rue Jules Horowitz BP 220, 38043 Grenoble cedex 9, Grenoble, France;

    CEA-INFS, 50 avenue du Lac Leman, Savoie Technolac, 73375 Le Bourget du Lac, France;

    CEA-INFS, 50 avenue du Lac Leman, Savoie Technolac, 73375 Le Bourget du Lac, France;

    European Synchrotron Radiation Facility, 6 Rue Jules Horowitz BP 220, 38043 Grenoble cedex 9, Grenoble, France;

    European Synchrotron Radiation Facility, 6 Rue Jules Horowitz BP 220, 38043 Grenoble cedex 9, Grenoble, France;

    CEA-INFS, 50 avenue du Lac Leman, Savoie Technolac, 73375 Le Bourget du Lac, France;

    European Synchrotron Radiation Facility, 6 Rue Jules Horowitz BP 220, 38043 Grenoble cedex 9, Grenoble, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Structural defects; A1. Synchrotron X-ray diffraction imaging; A1. Synchrotron X-ray topography; A2. Directional solidification; B1. Mono-like silicon;

    机译：A1。结构缺陷;A1。同步加速器X射线衍射成像;A1。同步加速器X射线形貌;A2。定向凝固;B1。单晶硅;

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