Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

著录项

• 来源
  《Journal of Crystal Growth》 |2014年第1期|518-522|共5页
• 作者

  Sehun Park; Jinwook Jung; Chulkyun Seok; Keun Wook Shin; Sung Hyun Park; Yasushi Nanishi; Yongjo Park; Euijoon Yoon;

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• 作者单位

  Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea,WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea,WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

  WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea,Department of Photonics, Ritsumeikan University, Shiga 525-8577, Japan;

  Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270, Korea;

  Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea,WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea,Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270, Korea;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Surfaces; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting indium compounds; B2. Semiconducting Ⅲ-Ⅴ materials; B3. Infrared devices;

  机译：A1。表面;A3。金属有机化学气相沉积;B1。锑化物;B2。半导体铟化合物;B2。半导体Ⅲ-Ⅴ材料;B3。红外线设备;