Selective growth of (001) GaAs using a patterned graphene mask

著录项

• 来源
  《Journal of Crystal Growth》 |2014年第1期|563-566|共4页
• 作者

  Yujirou Hirota; Yuya Shirai; Hiromu Iha; Yusuke Kito; Manabu Suzuki; Hironao Kato; Nao Yamamoto; Takahiro Maruyama; Shigeya Naritsuka;

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• 作者单位

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide;

  机译：A3。分子束外延;A3。选择性外延;B1。镓化合物;B2。半导体砷化镓;