...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Growth and properties of transparent conducting CuAlO_2 single crystals by a flux self-removal method
【24h】

Growth and properties of transparent conducting CuAlO_2 single crystals by a flux self-removal method

机译：助熔剂自清除法生长透明导电CuAlO_2单晶及其性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We investigated the growth and properties of CuAlO_2 single crystals grown by a flux self-removal method. In this method, the flux crept up the wall of an alumina crucible completely during the slow cooling process, leaving flux-free CuAlO_2 crystals on the bottom of the crucible. The resulting CuAlO_2 crystals had typical dimensions of 0.5-5 mm in the ab-plane and 10-300μm along the c-axis. The crystals had a hexagonal structure with a = b = 2.857(1)A and c=16.939(2)A. Their resistivity was anisotropic with a c-axis resistivity (ρ_c) about ～ 17 times higher than the ab-plane resistivity (ρ_ab). However, both ρ_(ab) and ρ_c showed thermally activated behavior with the same activation energy of ～0.6 eV. The CuAlO_2 crystals had direct and indirect bandgaps of 3.40 eV and 2.22 eV, respectively.
机译：我们研究了通过助熔剂自去除法生长的CuAlO_2单晶的生长和性能。在这种方法中，助焊剂在缓慢冷却过程中完全爬上了氧化铝坩埚的壁，使无助熔剂的CuAlO_2晶体留在坩埚的底部。所得的CuAlO_2晶体在ab平面上的典型尺寸为0.5-5mm，沿c轴的尺寸为10-300μm。晶体具有a = b = 2.857（1）A和c = 16.939（2）A的六边形结构。它们的电阻率是各向异性的，其c轴电阻率（ρ_c）比ab平面电阻率（ρ_ab）高约〜17倍。然而，ρ_（ab）和ρ_c均显示出热激活行为，其激活能为〜0.6 eV。 CuAlO_2晶体的直接带隙和间接带隙分别为3.40eV和2.22eV。

著录项

  • 来源
    《Journal of Crystal Growth》 |2013年第1期|31-34|共4页
  • 作者

    J.S. Yoon; Y.S. Nam; K.S. Baek; C.W. Park; H.L Ju; S.K. Chang;

  • 作者单位

    Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea;

    Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea;

    Department of Physics, Yonsei University, Wonju, Gangwon-do 220-710, Republic of Korea;

    Division of Applied Chemistry and Biotechnology, Hanbat National University, Daejon 305-719, Republic of Korea,Advanced Nano Products, Chungwon, Chungbuk 363-942, Republic of Korea;

    Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea;

    Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Activation energy; A1. Single crystal; A2. Flux self-removal method; B1. CuAlO_2; B2. Transparent conductor;

    机译：A1。活化能;A1。单晶;A2。助焊剂自我清除方法;B1。 CuAlO_2;B2。透明导体;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号