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首页> 外文期刊>Journal of Crystal Growth >Optical study of GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires grown by MOVPE
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Optical study of GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires grown by MOVPE

机译：MOVPE生长的GaAsN / GaAs和InGaAsN / GaAs T形量子线的光学研究

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摘要

GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires (T-QWRs) grown by metal-organic vapor phase epitaxy have been investigated by low-temperature photoluminescence (LT-PL) and temperature dependent PL to verify their optical properties. The T-QWR structure was clearly observed at the intersection of their familiar quantum wells (QWs), namely QW1 and QVV2. LT-PL spectra show the related QWR feature located at the lower energy side of their quantum wells related peaks. It is found that the quantum energy state in the T-QWR structure depends on the quantum energy states in QW1 and QW2. It is interpreted that they act as the second confinement barrier of QWR, which is occurred by the effect of the lateral confinement energy. In our case, the lateral confinement energy larger than 100 meV was observed for all samples. This is expected to be very useful for carrier confinement at higher temperature. PL spectrum of InGaAsN/GaAs T-QWR shows smaller peak-width and higher intense than that of GaAsN/GaAs T-QWRs. It may be explained by the strain compensation from an In atom incorporation, reducing the lattice distortion and improving the alloy fluctuation in the wire region.
机译：通过低温光致发光（LT-PL）和温度相关的PL研究了通过金属有机气相外延生长的GaAsN / GaAs和InGaAsN / GaAs T形量子线（T-QWR），以验证其光学性能。 T-QWR结构在他们熟悉的量子阱（QW），即QW1和QVV2的相交处清晰可见。 LT-PL光谱显示了相关的QWR特征，位于其量子阱相关峰的较低能量侧。发现T-QWR结构中的量子能态取决于QW1和QW2中的量子能态。据解释，它们充当了QWR的第二个限制屏障，这是由于横向限制能量的影响而发生的。在我们的案例中，所有样品的横向约束能量均大于100 meV。预期这对于在较高温度下限制载流子非常有用。与GaAsN / GaAs T-QWR相比，InGaAsN / GaAs T-QWR的PL光谱显示出更小的峰宽和更高的强度。这可以通过结合In原子进行应变补偿，减少晶格畸变和改善线材区域的合金波动来解释。

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