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首页> 外文期刊>Journal of Crystal Growth >MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures
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MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

机译：MBE生长和（100）和（631）定向调制掺杂AlGaAs / GaAs异质结构的表征

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摘要

In this work, the optical and electrical properties of simultaneously grown modulation-doped heterostructures (MDH) on (100)- and (631)-oriented GaAs substrates are investigated. Due to the amphoteric behavior of Si in AlGaAs doped films two dimensional electron (2DEG) and hole gas (2DHG) structures for the growth on (100) and (631) planes, respectively are obtained. Atomic force microscopy (AFM) revealed atomically flat surface for the (100)-MDH sample. On the contrary, (631)-MDH sustained uniform corrugation along [113] after the growth of the GaAs films, which provoked anisotropic mobility of the carriers at 77 K as confirmed by the Hall effect in a double arm bar. By photoluminescence spectroscopy (PL) the band to band transition, carbon and Si-related lines were identified. The concentration of the ternary alloy and impurities were evaluated by secondary ion mass spectrometry.
机译：在这项工作中，研究了在（100）和（631）取向的GaAs衬底上同时生长的调制掺杂异质结构（MDH）的光学和电学性质。由于硅在AlGaAs掺杂薄膜中的两性行为，获得了分别在（100）和（631）面上生长的二维电子（2DEG）和空穴气体（2DHG）结构。原子力显微镜（AFM）揭示了（100）-MDH样品的原子平面。相反，GaAs薄膜生长后，[631] -MDH沿[113]出现了均匀的波纹，这在双臂杆中的霍尔效应证实了在77 K下载流子的各向异性迁移。通过光致发光光谱法（PL），鉴定出能带到能带跃迁，碳和硅相关的谱线。通过二次离子质谱法评估三元合金和杂质的浓度。

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  • 来源
    《Journal of Crystal Growth》 |2013年第1期|88-91|共4页
  • 作者

    V.H. Mendez-Garcia; J.V. Gonzalez-Fernandez; L.I. Espinosa-Vega; T. Diaz; R. Romano; E. Rosendo; S. Gallardo; D. Vazquez-Cortes; S. Shimomura;

  • 作者单位

    Center for the Innovation and Application of Science and Technology (CIACyT), Univenidad Autonoma de San Luis Potosi, Av Sierra Leona 550, Lomas 2a Secc, SLP 78210, Mexico;

    Center for the Innovation and Application of Science and Technology (CIACyT), Univenidad Autonoma de San Luis Potosi, Av Sierra Leona 550, Lomas 2a Secc, SLP 78210, Mexico;

    Center for the Innovation and Application of Science and Technology (CIACyT), Univenidad Autonoma de San Luis Potosi, Av Sierra Leona 550, Lomas 2a Secc, SLP 78210, Mexico;

    Posgrado en Dispositivos Semiconductores, BUAP, 14 Sur y Ave. San Claudio, C.U. Edificio 103-C, Puebla, Pue. C. P. 72570, Mexico;

    Posgrado en Dispositivos Semiconductores, BUAP, 14 Sur y Ave. San Claudio, C.U. Edificio 103-C, Puebla, Pue. C. P. 72570, Mexico;

    Posgrado en Dispositivos Semiconductores, BUAP, 14 Sur y Ave. San Claudio, C.U. Edificio 103-C, Puebla, Pue. C. P. 72570, Mexico;

    Physics Department, CINVESTAV-IPN, AV IPN 2508, Mexico D.F;

    Graduate School of Science and Engineering, Ehime University, 3 Bukyo-cho, Matsuyama, Ehime 790-8577, Japan;

    Graduate School of Science and Engineering, Ehime University, 3 Bukyo-cho, Matsuyama, Ehime 790-8577, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Characterization; A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B3. High electron mobility transistors;

    机译：A1。表征;A1。掺杂;A3。分子束外延;B2。半导体砷化镓;B3。高电子迁移率晶体管;

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