High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

著录项

• 来源
  《Journal of Crystal Growth》 |2011年第1期|p.164-166|共3页
• 作者

  Wei-Sheng Liu; Hong-Ming Wu; Yu-Ann Liao; Jen-Inn Chyi; Wen-Yen Chen; Tzu-Min Hsu;

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• 作者单位

  Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan;

  Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan;

  Department of Electrical Engineering, National Central University, Chung-Li, Taiwan;

  Department of Electrical Engineering, National Central University, Chung-Li, Taiwan;

  Department of Physics and Center for Nano Science and Technology, National Central University, Chung-Li, Taiwan;

  Department of Physics and Center for Nano Science and Technology, National Central University, Chung-Li, Taiwan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting indium compound;

  机译：A1。纳米结构;A3。分子束外延;B2。半导体III-V材料;B2。半导体铟化合物;