首页> 外文期刊>Journal of Crystal Growth >Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition
【24h】

Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition

机译:脉冲激光沉积生长ZnO / ZnCdO / ZnO双异质结构的热稳定性

获取原文
获取原文并翻译 | 示例
           

摘要

The thermal stability of ZnO/Zn_(1-x)Cd_xO/ZnO double heterostructures grown by pulsed-laser deposition was studied by annealing them for 30 min in air at temperatures from 620 to 970 ℃. In photolumines-cence spectroscopy measurements on the as-grown samples emission with energies between 3.122 and 3.044 eV were observed, corresponding approximately to Cd-contents between 2.7% and 3.6%. Due to the annealing a monotonic blue-shift of the Zn_(1-x)Cd_xO-related luminescence was found with increasing annealing temperature. The shift was small for annealing temperatures of up to 720℃, thus a stability of the heterostructures up to this temperature was concluded. The underlying diffusion process was investigated to determine the diffusion coefficient for the different annealing temperatures. The temperature dependence of the diffusion coefficient shows an activation enthalpy in the range between 2.1 and 3.5 eV, depending on the growth conditions.
机译:通过在空气中620至970℃下退火30分钟,研究了脉冲激光沉积生长的ZnO / Zn_(1-x)Cd_xO / ZnO双异质结构的热稳定性。在光致发光分光光度法中,观察到正在生长的样品发射的能量在3.122和3.044 eV之间,大约相当于Cd含量在2.7%和3.6%之间。由于退火,随着退火温度的升高,发现Zn_(1-x)Cd_xO相关发光的单调蓝移。对于最高720℃的退火温度,位移很小,因此得出了在此温度下异质结构的稳定性。研究了基本的扩散过程,以确定不同退火温度下的扩散系数。取决于生长条件,扩散系数的温度依赖性显示其活化焓在2.1和3.5 eV之间。

著录项

  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.13-17|共5页
  • 作者单位

    Universitat Leipzig, Fakultatfiir Physik und Geowissenschaften, Institutfiir Experimentelte Physik H, Linnestr. 5, D-04W3 Leipzig, Germany;

    Universitat Leipzig, Fakultatfiir Physik und Geowissenschaften, Institutfiir Experimentelte Physik H, Linnestr. 5, D-04W3 Leipzig, Germany;

    Universitat Leipzig, Fakultatfiir Physik und Geowissenschaften, Institutfiir Experimentelte Physik H, Linnestr. 5, D-04W3 Leipzig, Germany;

    Universitat Leipzig, Fakultatfiir Physik und Geowissenschaften, Institutfiir Experimentelte Physik H, Linnestr. 5, D-04W3 Leipzig, Germany;

    Universitat Leipzig, Fakultatfiir Physik und Geowissenschaften, Institutfiir Experimentelte Physik H, Linnestr. 5, D-04W3 Leipzig, Germany,Centre de Recherche sur Vhetero-Epitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique (CNRS), Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    Universitat Leipzig, Fakultatfiir Physik und Geowissenschaften, Institutfiir Experimentelte Physik H, Linnestr. 5, D-04W3 Leipzig, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Luminescence; A1. Defects; A1. Diffusion; A3. Physical vapor deposition processes; B2. Semiconducting II-VI-materials;

    机译:A1。发光;A1。缺陷;A1。扩散;A3。物理气相沉积过程;B2。半导体II-VI材料;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号