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首页> 外文期刊>Journal of Crystal Growth >Growth kinetics of Al_xGa_(1-x)N grown via ammonia-based metal-organic molecular beam epitaxy
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Growth kinetics of Al_xGa_(1-x)N grown via ammonia-based metal-organic molecular beam epitaxy

机译：氨基金属有机分子束外延生长Al_xGa_（1-x）N的生长动力学

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摘要

The structural characteristics and growth regimes of AlGaN grown by ammonia-based metal-organic molecular beam epitaxy (NH_3-MOMBE) on GaN templates were investigated. The NH_3 utilization efficiency for the growth of AlGaN was estimated to be 2-2.5 times greater than the growth of GaN. Increasing the Al gas phase composition lead to an increase in the utilization efficiency as a result of increased NH_3 catalyzation. Despite the increased pyrolysis of ammonia, AlGaN films grown at 860 ℃ had significant active species desorption, leading to slower growth rates as well as lower calculated utilization efficiencies. AlGaN films grown with constant Al gas phase compositions showed an increase in the solid Al composition when grown more metal-rich, because of the preferential Al incorporation over Ga in N-limited growth environments. AlGaN surface morphologies became smoother with higher V/III ratios since surface pitting, which is attributed to decoration of threading dislocations, was reduced with increasing NH_3 flux.
机译：研究了氨基金属有机分子束外延（NH_3-MOMBE）在GaN模板上生长AlGaN的结构特征和生长方式。估计用于AlGaN生长的NH_3利用效率是GaN生长的2-2.5倍。由于增加的NH_3催化作用，Al气相组成的增加导致利用率的提高。尽管氨的热解增加，但在860℃下生长的AlGaN膜仍具有显着的活性物种解吸，从而导致生长速率降低以及计算的利用效率降低。当生长更多的金属时，以恒定的Al气相组成生长的AlGaN膜显示固体Al组成增加，这是因为在N受限的生长环境中Al优先于Ga引入。 AlGaN表面形貌随着V / III比率的增加而变得更平滑，这是因为随着NH_3通量的增加，表面点蚀（归因于螺纹位错的修饰）减少了。

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  • 来源
    《Journal of Crystal Growth》 |2010年第2期|209-212|共4页
  • 作者

    Daniel Billingsley; Walter Henderson; David Pritchett; W. Alan Doolittle;

  • 作者单位

    School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, CA 30332, USA;

    School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, CA 30332, USA;

    School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, CA 30332, USA;

    School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, CA 30332, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Metal-organic molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;

    机译：A3。金属有机分子束外延;B1。氮化物;B2。半导体III-V材料;

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