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首页> 外文期刊>Journal of Crystal Growth >Growth And Characterization Of Al_xga_(1-x)n Via Nh_3-based Metal-organic Molecular Beam Epitaxy
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Growth And Characterization Of Al_xga_(1-x)n Via Nh_3-based Metal-organic Molecular Beam Epitaxy

机译：Nh_3基金属有机分子束外延法生长和表征Al_xga_（1-x）n

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Growth and characterization of ammonia-based metal-organic molecular beam epitaxy (NH_3-MOMBE) Al_xGa_(1-x)N epitaxial films has been conducted. Al_xGa_(1-x)N films spanning the entire range of aluminum compositions were grown on GaN templates. This is the first reported successful growth of Al_xGa_(1-x)N via NH_3-MOMBE, using triethylgallium (TEGa), triethylaluminum (TEAl) and ammonia (NH_3) as the precursors. These films were characterized via optical interferometry (OI), atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscopy (SEM). High-quality Al_xGa_(1-x)N films, as inferred by XRD, are achievable in films without cracking. The catalytic effect of Al on NH_3 is found to play a major part in the growth rate of the Al_xGa_(1-x)N films. The excessive nitrogen produced through this catalytic effect hinders the growth rate at lower Al composition while increasing the growth rate of Al_xGa_(1-x)N (x > 0.4) films. Stress in the deposited films is found to be partially relieved through surface cracking along the <1120> direction in the film. These cracks provide dislocation gettering centers, with the dislocation pit density decreasing with increasing Al composition. A basic understanding on the factors affecting the growth of Al_xGa_(1-x)N is determined and will become the basis for further investigations into the optimization of Al_xGa_(1-x)N growth.
机译：已经进行了氨基金属有机分子束外延（NH_3-MOMBE）Al_xGa_（1-x）N外延膜的生长和表征。在GaN模板上生长了覆盖整个铝成分范围的Al_xGa_（1-x）N膜。这是首次报道使用三乙基镓（TEGa），三乙基铝（TEAl）和氨（NH_3）作为前体通过NH_3-MOMBE成功生长Al_xGa_（1-x）N。这些膜通过光学干涉法（OI），原子力显微镜（AFM），X射线衍射（XRD）和扫描电子显微镜（SEM）进行表征。通过XRD可以推断出高质量的Al_xGa_（1-x）N薄膜，并且不会产生裂纹。发现Al对NH_3的催化作用在Al_xGa_（1-x）N膜的生长速率中起主要作用。通过这种催化作用产生的过量氮会阻碍较低Al成分的生长速度，同时会增加Al_xGa_（1-x）N（x> 0.4）薄膜的生长速度。发现沉积的膜中的应力通过沿膜中的<1120>方向的表面裂纹而得以部分缓解。这些裂纹提供了位错吸收中心，位错坑的密度随Al含量的增加而降低。确定了对影响Al_xGa_（1-x）N生长的因素的基本理解，并将成为进一步研究优化Al_xGa_（1-x）N生长的基础。

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