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首页> 外文期刊>Journal of Crystal Growth >Interface and defect structures in ZnO films on m-plane sapphire substrates
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Interface and defect structures in ZnO films on m-plane sapphire substrates

机译：m面蓝宝石衬底上ZnO膜的界面和缺陷结构

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摘要

Interface and defect structures in ZnO films grown on (1010) m-plane sapphire substrates by plasma-assisted molecular beam epitaxy were investigated by transmission electron microscopy (TEM). Distribution of misfit dislocations (MDs) at the ZnO/Al_2O_3 interfaces was orientation dependent and quite anisotropic. In addition, type-I_1 stacking faults (SFs) bounded by the Frank dislocations with the Burgers vector of 1/6[2023] were observed to be predominant. Many SFs initiated from the interface to the film surface were observed in addition to the MDs at the interface. The analysis of the high-resolution TEM revealed no correlation between the SFs and the MDs. The ZnO films were not found to be pure m-plane ZnO and (1013) domains were frequently observed in the film with otherwise mostly (1010) m-plane in nature. These (1013) domains were not nucleated at the interface but initiated inside the ZnO film above the interface and reached the top surface.
机译：通过透射电子显微镜（TEM）研究了在等离子辅助分子束外延作用下在（1010）m面蓝宝石衬底上生长的ZnO薄膜的界面和缺陷结构。 ZnO / Al_2O_3界面上的失配位错（MD）分布与取向有关，并且各向异性很大。另外，观察到以Franks位错为1/6的Burgers矢量为边界的I_1型堆积断层（SF）占主导地位。除了在界面处的MD之外，还观察到许多从界面到膜表面引发的SF。高分辨率TEM的分析显示SF和MD之间没有相关性。 ZnO薄膜未发现是纯m平面的ZnO，并且在薄膜中经常观察到（1013）域，而自然界中大多数为（1010）m平面。这些（1013）域在界面处没有成核，而是在界面上方的ZnO膜内部引发并到达顶表面。

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  • 来源
    《Journal of Crystal Growth》 |2010年第2期|238-244|共7页
  • 作者

    Jae Wook Lee; Jung-Hyun Kim; Seok Kyu Han; Soon-Ku Hong; Jeong Yong Lee; Sun Ig Hong; Takafumi Yao;

  • 作者单位

    Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;

    Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;

    Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;

    Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;

    Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;

    Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Characterization; A1. Defects; A1. Interfaces; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II-VI materials;

    机译：A1。表征;A1。缺陷;A1。接口;A3。分子束外延;B1。锌化合物;B2。半导体II-VI材料;

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