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首页> 外文期刊>Journal of Crystal Growth >Growth of epitaxial TmFeCuO_4 thin films by pulsed laser deposition
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Growth of epitaxial TmFeCuO_4 thin films by pulsed laser deposition

机译:脉冲激光沉积生长TmFeCuO_4外延薄膜

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摘要

Epitaxial thin films of TmFeCuO_4 with a two-dimensional triangular lattice structure were successfully grown on yttria-stabilized-zirconia substrates by pulsed laser deposition and ex situ annealing in air. The films as-deposited below 500 ℃ showed no TmFeCuO_4 phase and the subsequent annealing resulted in the decomposition of film components. On the other hand, as-grown films deposited at 800 ℃ showed an amorphous nature. Thermal annealing converted the amorphous films into highly (0 0 1)-oriented epitaxial films. The results of scanning electron microscopic analysis suggest that the crystal growth process during thermal annealing is dominated by the regrowth of non-uniformly shaped islands to the distinct uniform islands of hexagonal base.
机译:通过脉冲激光沉积和在空气中非原位退火,在氧化钇稳定的氧化锆衬底上成功地生长了具有二维三角晶格结构的TmFeCuO_4外延薄膜。在500℃以下沉积的薄膜没有TmFeCuO_4相,随后的退火导致薄膜成分的分解。另一方面,在800℃下沉积的成膜薄膜显示出非晶态。热退火将非晶膜转变为高度(0 0 1)取向的外延膜。扫描电子显微镜分析的结果表明,热退火过程中的晶体生长过程主要由不均匀形状的岛向六角形基体的不同均匀岛的再生长主导。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第15期|P.2273-2278|共6页
  • 作者单位

    Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    rnDepartment of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Department of Bioengineering, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Laser epitaxy; A3. Solid phase epitaxy; B1. Oxides; B2. Magnetic materials;

    机译:A3。激光外延;A3。固相外延;B1。氧化物;B2。磁性材料;

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