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机译:脉冲激光沉积生长TmFeCuO_4外延薄膜
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
rnDepartment of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;
rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
rnDepartment of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Department of Bioengineering, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
A3. Laser epitaxy; A3. Solid phase epitaxy; B1. Oxides; B2. Magnetic materials;
机译:沉积温度对脉冲激光沉积法在RABiTS衬底上YBCO薄膜外延生长的影响
机译:控制使用常规脉冲激光沉积,混合脉冲激光沉积和固态外延制备的BiMnO_3薄膜的Bi含量,相形成和外延特性
机译:通过等离子体辅助脉冲激光沉积(Alxga1?x)2O3薄膜的外延生长
机译:通过脉冲激光沉积与原位激光退火外延生长1 / spl mu / m厚的非线性光学KNbO / sub 3 /薄膜
机译:通过正交交叉束脉冲激光沉积在硅上外延取向氮化钛薄膜的生长和表征。
机译:在不同温度下通过脉冲激光沉积在AlN / Si异质结构上外延生长的GaN薄膜的微观结构和生长机理
机译:脉冲激光沉积在SRTIO3基材上高质量Bi2O2Se薄膜的外延生长和表征