Growth and interface study of 2 in diameter CdZnTe by THM technique

U.N. Roy; rnS. Weiler; rnJ. Stein

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Growth and interface study of 2 in diameter CdZnTe by THM technique

机译：THM技术研究2直径CdZnTe的生长和界面

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Growth interface of large diameter CdZnTe ingots grown from Te solution by travelling heater method have been studied. Both macroscopic and microscopic investigations were carried out. The results indicated that the shape of the interface strongly governs the grain growth on the ingot, while the microscopic morphology of the growth interface is responsible for Te inclusions in the grown crystal.

机译：研究了通过行进加热器法从Te溶液中生长的大直径CdZnTe锭的生长界面。进行了宏观和微观研究。结果表明，界面的形状强烈地控制着铸锭上的晶粒生长，而生长界面的微观形态则是生长晶体中Te夹杂物的原因。

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来源
《Journal of Crystal Growth》 |2010年第19期|p.2840-2845|共6页
作者
U.N. Roy; rnS. Weiler; rnJ. Stein;
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作者单位

ICx Radiation Inc., 100 Midland Road, Oak Ridge, TN 37830, USA;

rnICx Radiation Inc., 100 Midland Road, Oak Ridge, TN 37830, USA;

rnICx Radiation Inc., 100 Midland Road, Oak Ridge, TN 37830, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Growth interface; A2.THM; B2. CdZnTe;

机译：A1。增长接口;A2.THM;B2。镉锌碲;

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Growth and interface study of 2 in diameter CdZnTe by THM technique

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