Metalorganic vapor phase epitaxy of InN on GaN using tertiary- butylhydrazine as nitrogen source

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第13期|P.1983-1985|共3页
• 作者

  Raimund Kremzow; Markus Pristovsek; Joachim Stellmach; Oezguer Savas; Michael Kneissl;

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• 作者单位

  Technische Universitaet Berlin, Institute of Solid State Physics, EW 6-1, Hardenbergstrasse 36, D-10623 Berlin, Germany;

  rnTechnische Universitaet Berlin, Institute of Solid State Physics, EW 6-1, Hardenbergstrasse 36, D-10623 Berlin, Germany;

  Technische Universitaet Berlin, Institute of Solid State Physics, EW 6-1, Hardenbergstrasse 36, D-10623 Berlin, Germany;

  Technische Universitaet Berlin, Institute of Solid State Physics, EW 6-1, Hardenbergstrasse 36, D-10623 Berlin, Germany;

  Technische Universitaet Berlin, Institute of Solid State Physics, EW 6-1, Hardenbergstrasse 36, D-10623 Berlin, Germany;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;

  机译：A1。表面结构;A3。金属有机气相外延;B1。氮化物;B2。半导体III-V材料;