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首页> 外文期刊>Journal of Crystal Growth >Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires
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Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires

机译：ZnO异质外延，同质外延二维层和纳米线的光学特性比较

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摘要

The spectroscopic properties of ZnO epilayers grown by molecular beam epitaxy are investigated. Three samples are compared: a homoepitaxial layer grown on a Crystec substrate, a sample directly grown on c-sapphire and a layer grown on c-sappire using an MgO buffer. In the latter case, in spite of the high dislocation density, temperature-dependent photoluminescence measurements show only a small decrease of the luminescence intensity between 4 and 300 K, with an activation energy of 108 meV. Cathodoluminescence presents an inhomogeneous emission on the micrometric scale: a stronger emission is measured in small nanometric areas. A tentative explanation of this behavior is proposed. The optical properties of these three samples are also compared to those of two-dimensional homoepitaxial layers and ZnO nanowires grown on sapphire and p-type GaN by metal organic vapor-phase epitaxy.
机译：研究了分子束外延生长的ZnO外延层的光谱性质。比较了三个样品：在Crystec基板上生长的同质外延层，直接在c蓝宝石上生长的样品和使用MgO缓冲液在c蓝宝石上生长的层。在后一种情况下，尽管位错密度高，但随温度变化的光致发光测量结果显示，在4到300 K之间的发光强度只有很小的降低，其激活能为108 meV。阴极发光在微米尺度上呈现不均匀的发射：在较小的纳米区域中测得的发射更强。提出了对此行为的初步解释。还将这三个样品的光学性质与通过金属有机气相外延在蓝宝石和p型GaN上生长的二维同质外延层和ZnO纳米线的光学性质进行了比较。

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  • 来源
    《Journal of Crystal Growth》 |2009年第7期|2172-2175|共4页
  • 作者

    I.C. Robin; P. Marotel; A.H. El-Shaer; V. Petukhov; A. Bakin; A. Waag; M. Lafossas; J. Garcia; M. Rosina; A. Ribeaud; S. Brochen; P. Ferret; G. Feuillet;

  • 作者单位

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strafie 66, D-38106 Braunschweig, Germany;

    Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strafie 66, D-38106 Braunschweig, Germany;

    Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strafie 66, D-38106 Braunschweig, Germany;

    Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strafie 66, D-38106 Braunschweig, Germany;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Department of Optronics, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Cathodoluminescence; A1. Nanorod; A1. Nanowire; A1. Photoluminescence; A3. MBE; A3. MOCVD; B1. Zinc oxide;

    机译：A1。阴极发光;A1。纳米棒;A1。纳米线;A1。光致发光;A3。 MBE;A3。 MOCVD;B1。氧化锌;

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