Ag-doped zinc oxide(ZnO: Ag)films were prepared on ITO substrates by radio frequency magnetron sputtering technique(RF). The structure,surface morphology and optical property of the epitaxial film were investigated by XRD, SEM and UV-Vis spectrum separately. The study of Ⅰ-Ⅴ characteristics of ZnO: AgTO films indicate that ZnO: Ag and ITO form heterojunction. Under a reverse bias of 15V and 365nm UV,the photocurrent and dark current of the heterojunction are 11.2nA and 198nA, respectively. So,sensitivity is 17. 7. UV response of the heterojunction has a fast rise time of 700ms and a fall time of 1. 5s.%采用射频磁控溅射方法在ITO基片上外延掺Ag的ZnO薄膜,分别用XRD、SEM和紫外可见光分光光度计表征外延薄膜结构、形貌和光学性质.ZnO:Ag/ITO薄膜伏安特性的研究表明,ZnO:Ag与ITO形成异质结.在紫外光波长365nm、负偏压15V情况下异质结暗电流为11.2hA,光电流为198hA,灵敏度(光电流与暗电流之比)为17.7.此异质结的紫外光响应上升时间为700ms,下降时间为1.5s.
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