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首页> 外文期刊>Journal of Crystal Growth >Effect of A1N interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE
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Effect of A1N interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE

机译：AlN中间层对等离子辅助MBE生长的GaN-on-Si结构的影响

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摘要

The insertion of an A1N interlayer for tensile strain relief in GaN thin films grown on Si(111) on-axis and vicinal substrates by nitrogen rf plasma source molecular beam epitaxy has been investigated. The 15 nm A1N interlayer was inserted between a bottom 0.5 μm GaN layer and the top 1.0 urn GaN layer. The interlayer was effective in reducing the tensile stress to the level required for complete avoidance of microcracks, which were present in high densities in the case of GaN-on-Si heterostructures grown without an A1N interlayer. The strain in all the layers of the heterostructure was analyzed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. Reciprocal space mapping in XRD indicated that the 15 nm A1N interlayer was on average coherently strained with the GaN. However, TEM observations showed that the interlayer was partially relaxed in local regions. The A1N interlayer was also observed to interfere with the GaN growth process. In particular, above morphological features such as v-shaped surface depressions, GaN was overgrown with a high density of threading dislocations and inversion domain boundaries. A synergistic relaxation mechanism is proposed for the A1N interlayer leading to an elastically strained interlayer interconnected by plastically relaxed patches.
机译：已经研究了通过氮射频等离子体源分子束外延在用于Si（111）轴和邻近衬底上生长的GaN薄膜中插入用于拉伸应变消除的AlN中间层的方法。将15 nm AlN夹层插入底部0.5μmGaN层和顶部1.0 um GaN层之间。中间层有效地将拉伸应力降低到完全避免微裂纹所需的水平，而在没有AlNN中间层的情况下生长的GaN-on-Si异质结构中，这种裂纹以高密度存在。通过X射线衍射（XRD）和透射电子显微镜（TEM）测量来分析异质结构的所有层中的应变。 XRD中的相互空间映射表明15 nm AlN中间层平均与GaN相干应变。然而，TEM观察显示中间层在局部区域部分松弛。还观察到AlN夹层会干扰GaN的生长过程。尤其是，在诸如v形表面凹陷之类的形态特征上，GaN长满，具有高密度的螺纹位错和反型畴边界。提出了一种用于AlN中间层的协同松弛机制，其导致通过塑性松弛斑块互连的弹性应变中间层。

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  • 来源
    《Journal of Crystal Growth》 |2009年第7期|2010-2015|共6页
  • 作者

    A. Adikimenakis; S.-L Sahonta; G.P. Dimitrakopulos; J. Domagala; Th. Kehagias; Ph. Komninou; E. Iliopoulos; A. Georgakilas;

  • 作者单位

    Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1527, 71110 Heraklion-Crete, Greece Physics department, University of Crete, Heraklion-Crete, Greece;

    Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;

    Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;

    Institute of Physics, Polish Academy of Science, A1. Lotnikow 32/46, 02-668 Warsaw, Poland;

    Physics department, University of Crete, Heraklion-Crete, Greece;

    Physics department, University of Crete, Heraklion-Crete, Greece;

    Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1527, 71110 Heraklion-Crete, Greece Physics department, University of Crete, Heraklion-Crete, Greece;

    Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1527, 71110 Heraklion-Crete, Greece Physics department, University of Crete, Heraklion-Crete, Greece;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    A1. High-resolution X-ray diffraction; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. Gallium Nitride;

    机译：A1。高分辨率X射线衍射;A1。透射电子显微镜;A3。分子束外延;B1。氮化镓;

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