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首页> 外文期刊>Journal of Crystal Growth >ScAlN nanowires: A cathodoluminescence study
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ScAlN nanowires: A cathodoluminescence study

机译:ScAlN纳米线:阴极发光研究

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摘要

Wurtzite ScAIN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0001] axis, had an average length of 1 μm, a diameter between 50 and 150nm, and a ScAIN composition with a 95:5Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (A1N) matrix. The formation of such a semiconducting ScAIN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.
机译:通过氢化物气相外延(HVPE)在氮化scan(ScN)薄膜上生长的纤锌矿ScAIN纳米线通过X射线(EDX),CL的能量色散分析,高分辨率透射电子光谱(HRTEM)和扫描进行了分析电子显微镜(SEM)。导线沿[0001]轴生长,平均长度为1μm,直径在50到150nm之间,并且ScAIN成分的比例为95:5Al:Sc。对单个导线的阴极发光研究表明,在2.4 eV附近有尖锐的发射,该发射源自氮化铝(AlN)基质中的Sc原子。这种半导体ScAIN合金的形成可能会为InAlN提供一个新的替代品,用于在200-550 nm范围内运行的光电应用。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第11期|3147-3151|共5页
  • 作者单位

    IMM, Radboud University, Toemooiveld 1, 6525 ED Nijmegen, The Netherlands Department of Applied Materials Science, P.O. Box 9010,6500 GL Nijmegen, The Netherlands;

    Department of Physics, Chemistry and Biology, Linkoping University, SE-587 83 Linkoping, Sweden;

    Department of Physics, Chemistry and Biology, Linkoping University, SE-587 83 Linkoping, Sweden;

    IMM, Radboud University, Toemooiveld 1, 6525 ED Nijmegen, The Netherlands;

    IMM, Radboud University, Toemooiveld 1, 6525 ED Nijmegen, The Netherlands;

    IMM, Radboud University, Toemooiveld 1, 6525 ED Nijmegen, The Netherlands;

    IMM, Radboud University, Toemooiveld 1, 6525 ED Nijmegen, The Netherlands Materials Innovation Institute (M2i), 2628CD Delft, The Netherlands Philips Research Laboratories Eindhoven, High Tech Campus II, 5656AE Eindhoven, The Netherlands;

    Philips Research Laboratories Eindhoven, High Tech Campus II, 5656AE Eindhoven, The Netherlands;

    Kansas State University, Department of Chemical Engineering, Durland Hall, Manhattan, KS 66506-5102, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Nanostructures; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;

    机译:A1。纳米结构;A3。氢化物气相外延;B1。氮化物;B2。半导体铝化合物;

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