AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

A. Le Louarn; S. Vezian; F. Semond; J. Massies

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AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

机译：首先在（111）Si：Al或N上生长用于GaN外延的AlN缓冲层

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AlN is generally used as buffer layer for the epitaxial growth of GaN on Si(111) substrate. In this work, we specifically address the relationship between the way the AlN growth is initiated on the Si(111) surface and the overall properties of the final GaN epitaxial layer. The growth is performed by molecular beam epitaxy with ammonia (NH_3) as nitrogen source. Two procedures have been compared: exposing the Si surface first to NH_3 or Al. The AlN nucleation is followed in real-time by reflection high-energy electron diffraction and critical stages are also investigated in real space using scanning tunnelling microscopy and transmission electron microscopy. Atomic force microscopy. X-ray diffraction and photoluminescence are also used to assess the properties of the final GaN epitaxial layer. It is shown that best results in terms of GaN overall properties are obtained when the growth is initiated by exposing the Si(111) surface to NH_3 first. This is mainly due to the fact that almost an order of magnitude decrease of the dislocation density is obtained.

机译：AlN通常用作在Si（111）衬底上外延生长GaN的缓冲层。在这项工作中，我们专门解决了AlN在Si（111）表面上开始生长的方式与最终GaN外延层的整体性能之间的关系。通过以氨（NH_3）为氮源的分子束外延进行生长。比较了两种方法：首先将Si表面暴露于NH_3或Al。 AlN成核后实时进行反射高能电子衍射，并使用扫描隧道显微镜和透射电子显微镜在实际空间中研究了关键阶段。原子力显微镜。 X射线衍射和光致发光也用于评估最终GaN外延层的性能。结果表明，当首先通过将Si（111）表面暴露于NH_3来开始生长时，可以获得GaN总体性能方面的最佳结果。这主要是由于获得了位错密度几乎降低了一个数量级的事实。

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来源
《Journal of Crystal Growth》 |2009年第12期|3278-3284|共7页
作者
A. Le Louarn; S. Vezian; F. Semond; J. Massies;
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作者单位

Centre de Recherche sur I'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

Centre de Recherche sur I'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

Centre de Recherche sur I'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

Centre de Recherche sur I'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. RHEED; A3. MBE; B1. Nitrides;

机译：A1。 RHEED;A3。 MBE;B1。氮化物;

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专利

1. Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method [J] . Kung-Liang Lin, Edward-Yi Chang, Yu-Lin Hsiao, Applied Physics Letters . 2007,第22期

机译：使用有机金属气相外延方法在多层AlN / AlGaN缓冲层上在150 mm Si（111）上生长GaN膜
2. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111) [J] . Ravikiran L., Radhakrishnan K., Dharmarasu N., Journal of Applied Physics . 2013,第12期

机译：AlN / GaN应力缓解层的应变状态及其对100mm Si（111）上氨分子束外延生长的GaN缓冲层的影响
3. OPTICAL PROPERTIES OF GaN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY ON AlN BUFFER LAYER ON (111) Si [J] . M. GODLEWSKI, J.P. BERGMAN, B. MONEMAR, Acta Physica Polonica. A . 1996,第4期

机译：（111）Si上AlN缓冲层上由气源分子束表观生长的GaN外延层的光学性质
4. Growth and characterizations of AlGaN/GaN heterostructures using multi-AlN buffer layers in plasma-assisted molecular beam epitaxy [C] . T., S. Shimizu, S. Sonoda, International conference on molecular beam epitaxy . 2001

机译：使用多AlN缓冲层在等离子体辅助分子束外延的多Aln缓冲层的生长和特征
5. Aluminum Nitride Buffer Layer Growth for Group III-Nitride Epitaxy on (111) Silicon [D] . Lange, Andrew Philip. 2016

机译：氮化铝缓冲层生长III族氮化物外延（111）硅
6. The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion [O] . Alexana Roshko, Matthew Brubaker, Paul Blanchard, -1

机译：Si在GaN / AlN / Si（111）等离子体辅助分子束外延中的作用：极性和反型
7. In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy [O] . Florian Chaumeton, Sébastien Gauthier, David Martrou 2015

机译：使用氨分子束外延在4H-siC（0001）和si（111）衬底上以低生长速率生长的高质量alN（0001）层的原位NC-aFm测量

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

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