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首页> 外文期刊>Journal of Crystal Growth >Effect of substrate temperature on the room-temperature ferromagnetism of Cu-doped ZnO films
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Effect of substrate temperature on the room-temperature ferromagnetism of Cu-doped ZnO films

机译：衬底温度对掺Cu ZnO薄膜室温铁磁的影响

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摘要

Wurtzite structure ZnO films doped with ～2 at% Cu were deposited at substrate temperatures (T_s) from 350 to 600 ℃ by helicon magnetron sputtering. All the films exhibited room-temperature (RT) ferromagnetism (FM) and the maximum saturation magnetization (M_s) was 1.2 emu/cm~3 (～0.15 μ_B/Cu). Cu ions were mainly in a divalent state as identified by X-ray photoelectron spectroscopy. FM tended to increase with decreasing T_s, and vacuum annealing enhanced the M_s. These results suggested that oxygen vacancies and/or zinc interstitials might contribute to the ferromagnetic performance. Thus, the observed FM was explained in terms of the defect related mechanism.
机译：通过螺旋磁控溅射在350〜600℃的衬底温度（T_s）下沉积了掺杂〜2at％Cu的纤锌矿型ZnO薄膜。所有薄膜均表现出室温（RT）铁磁性（FM），最大饱和磁化强度（M_s）为1.2 emu / cm〜3（〜0.15μB/ Cu）。通过X射线光电子能谱鉴定，Cu离子主要处于二价状态。 FM倾向于随着T_s的减小而增加，真空退火提高了M_s。这些结果表明氧空位和/或锌间隙可能有助于铁磁性能。因此，根据缺陷相关机理解释了观察到的FM。

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  • 来源
    《Journal of Crystal Growth》 |2009年第17期|4270-4274|共5页
  • 作者

    Fan-Yong Ran; Masaki Tanemura; Yasuhiko Hayashi; Takehiko Hihara;

  • 作者单位

    Department of Environmental Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan;

    Department of Environmental Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan Department of Frontier Materials, Graduate School of Engineering Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan;

    Department of Environmental Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan Department of Frontier Materials, Graduate School of Engineering Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan;

    Department of Frontier Materials, Graduate School of Engineering Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Doping; A3. Helicon magnetron sputtering; B2. Magnetic semiconductor; B2. Semiconducting II-VI materials;

    机译：A1。掺杂A3。螺旋磁控溅射;B2。磁性半导体B2。半导体II-VI材料;

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