Seeded growth of AlN bulk crystals in m- and c-orientation

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第1期|58-63|共6页
• 作者

  P. Lu; R. Collazo; R.F. Dalmau; G. Durkaya; N. Dietz; B. Raghothamachar; M. Dudley; Z. Sitar;

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• 作者单位

  Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;

  Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;

  HexaTech, Inc., 991 Aviation Pkwy., Suite 800, Morrisville, NC 27560, USA;

  Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA;

  Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA;

  Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794, USA;

  Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794, USA;

  Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. High resolution X-ray diffraction; A1. Substrates; A1. X-ray topography; A2. Growth from vapor; A2. Seeded vapor growth; B1. Nitrides;

  机译：A1。高分辨率X射线衍射;A1。基材;A1。 X射线形貌;A2。蒸气生长;A2。种子蒸气生长;B1。氮化物;