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首页> 外文期刊>Journal of Crystal Growth >Structural and photoluminescence properties of single-crystalline In_2O_3 films grown by metal organic vapor deposition
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Structural and photoluminescence properties of single-crystalline In_2O_3 films grown by metal organic vapor deposition

机译:金属有机气相沉积法生长单晶In_2O_3薄膜的结构和光致发光特性

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摘要

Single-crystalline In_2O_3 thin films were obtained on α-Al_2O_3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The structural, optical and photoluminescence (PL) properties of the In_2O_3 films were investigated in detail. The sample prepared at 650 ℃ exhibited best crystal quality with body-centered cubic (bcc) structure of pure In_2O_3. The average transmittance for the films in the visible spectral range exceeded 85%. A single and sharp ultra-violet PL peak near 337 nm was observed at room temperature (RT). The corresponding PL mechanisms were investigated.
机译:通过金属有机化学气相沉积(MOCVD)方法在α-Al_2O_3(0001)衬底上获得了单晶In_2O_3薄膜。详细研究了In_2O_3薄膜的结构,光学和光致发光(PL)特性。在650℃制备的样品表现出最佳的晶体质量,具有纯In_2O_3的体心立方(bcc)结构。薄膜在可见光谱范围内的平均透射率超过85%。在室温(RT)下观察到一个接近337 nm的单一且尖锐的紫外线PL峰。研究了相应的PL机制。

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