...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition
【24h】

Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

机译：通过卤化物化学气相沉积法生长厚p型SiC外延层

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The halide chemical vapor deposition process for single-crystal SiC achieves growth rates over 200 μm/h at temperatures approaching 2000 ℃. This work examines the conditions required to produce 80-100-μm-thick heavily p-type doped layers on 4H-SiC substrates by using boron trichloride and trimethylaluminum at high growth temperatures. Dopant incorporation as a function of the dopant concentration in the growth ambient was evaluated by secondary ion mass spectrometry (SIMS). The maximum Al and B concentrations achieved were 5 × 10~(17) and 4 × 10~(19) atoms/cm~3, respectively. Low Al incorporation efficiency was attributed to the high growth temperature and reaction of Al with Cl to form volatile chloride species. Aluminum incorporation was consistent with incorporation as a simple solid solution, while B incorporation exhibited a much stronger interaction with the SiC matrix. Aluminum incorporation was found to be an order of magnitude higher on the Si-face of the substrate, while B incorporation was essentially the same on both the Si-face and C-face. Aluminum incorporation was increased by a factor of five as the C/Si ratio increased from 0.42 to 0.86, while boron incorporation showed no sensitivity to the C/Si ratio. The B concentrations measured by SIMS were of the same magnitude as the net acceptor concentrations estimated from capacitance-voltage measurements, indicating a significant fraction of the B dopant was activated.
机译：在接近2000℃的温度下，用于单晶SiC的卤化物化学气相沉积工艺的生长速率超过200μm/ h。这项工作研究了在高生长温度下通过使用三氯化硼和三甲基铝在4H-SiC衬底上生产80-100μm厚的重p型掺杂层的条件。通过二次离子质谱（SIMS）评估生长环境中掺杂剂的掺入量与掺杂剂浓度的关系。达到的最大Al和B浓度分别为5×10〜（17）和4×10〜（19）原子/ cm〜3。低的铝结合效率归因于高的生长温度和铝与氯反应形成挥发性氯化物。铝的掺入与作为简单固溶体的掺入一致，而硼的掺入表现出与SiC基体的更强的相互作用。发现在基板的Si面上铝的掺入要高一个数量级，而在Si面和C面上的B掺入基本相同。随着C / Si比从0.42增加到0.86，铝的掺入增加了5倍，而硼的掺入对C / Si的比值显示不敏感。通过SIMS测量的B浓度与根据电容-电压测量估算的净受体浓度具有相同的幅度，表明大部分的B掺杂物被激活。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号