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首页> 外文期刊>Journal of Crystal Growth >Very High Efficiency Triple Junction Solar Cells Grown By Movpe
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Very High Efficiency Triple Junction Solar Cells Grown By Movpe

机译：Movpe生产的超高效三结太阳能电池

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摘要

The GaInP/GaInAs/Ge triple junction (3J) space cell technology is nearing practical achievable conversion efficiency limits of ～30% under 1-sun AMO illumination. We present solar cell device-modeling results that indicate the GaInP/GaAs/GaInAs architecture with optimal bandgap energies will produce an additional 4% output power relative to the present GalnP/GalnAs/Ge 3J space cell technology. We have grown the GalnP/GaAs/GalnAs 3J cell on GaAs substrates in an inverted fashion incorporating a 1.0 eV metamorphic GaInAs cell, using metal-organic vapor-phase epitaxy (MOVPE) in a production scale reactor. Nearly strain-free growth of the metamorphic GalnAs cell was verified by high-resolution X-ray reciprocal space mapping. From cathodoluminescence (CL) data, the 1.0 eV metamorphic GaInAs cell threading dislocation density (TDD) is estimated to be 5 × 10~6 cm~(-2). With this level of TDDs we are able to produce a 3J IMM cells with a one-sun AMO efficiency of 32%. In addition, external quantum efficiency (EQE) data suggests that improvements in current matching of the subcells will result in an AMO efficiency of 33%.
机译：GaInP / GaInAs / Ge三结（3J）空间电池技术在1太阳AMO照明下已接近实用的转换效率极限，约为30％。我们目前的太阳能电池设备建模结果表明，具有最佳带隙能量的GaInP / GaAs / GaInAs体系结构相对于当前的GalnP / GalnAs / Ge 3J空间电池技术将产生额外的4％输出功率。我们已经在GaAs衬底上以集成有1.0 eV变质GaInAs电池的倒置方式在半导体生产规模的反应器中使用金属有机气相外延（MOVPE）生长了GalnP / GaAs / GalnAs 3J电池。通过高分辨率X射线互易空间图谱验证了变质GalnAs细胞几乎无应变的生长。根据阴极发光（CL）数据，1.0 eV变质GaInAs细胞穿线位错密度（TDD）估计为5×10〜6 cm〜（-2）。使用这种水平的TDD，我们能够生产出3J IMM电池，其单阳AMO效率为32％。此外，外部量子效率（EQE）数据表明，子电池电流匹配的改进将导致AMO效率达到33％。

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