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首页> 外文期刊>Journal of Crystal Growth >Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells
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Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

机译：MOVPE在多结太阳能电池上生长的Ge上Ga（In）As外延层的表面形态研究

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摘要

The surface morphology of Ga(In)As films grown on offcut Ge substrates was characterized with atomic force microscopy (AFM) and scanning electron microscopy (SEM). We have investigated the effect of growth parameters on the Ga(In)As films by metal-organic vapor-phase epitaxy (MOVPE). The interface properties strongly depended on the growth conditions. We found that two-step growth temperatures can obtain good morphology and suppress the antiphase domains (APDs). Under optimized growth conditions APD-free Ga(In)As film on Ge was obtained. Our results indicate that the 6° offcut Ge substrate with two-step temperatures growth 770 and 650℃, are the optimum set of growth conditions for the buffer layer growth of Ga(In)As/Ge heterostructure solar cells. The root mean square (rms) roughness was approximately 4.58 nm over a 10 x 10 μm~2 area. The buffer Ga(In)As films on Ge substrate were developed in preparation for growing multi-junction solar cells and obtained high performance with good morphology.
机译：利用原子力显微镜（AFM）和扫描电子显微镜（SEM）对生长在Ge衬底上的Ga（In）As薄膜的表面形貌进行了表征。我们已经通过金属有机气相外延（MOVPE）研究了生长参数对Ga（In）As薄膜的影响。界面性质在很大程度上取决于生长条件。我们发现两步生长温度可以获得良好的形态并抑制反相域（APDs）。在最佳生长条件下，获得了在Ge上无APD的Ga（In）As膜。我们的结果表明，具有两步温度增长770和650℃的6°边界锗衬底是Ga（In）As / Ge异质结构太阳能电池缓冲层生长的最佳生长条件。在10 x 10μm〜2的面积上，均方根（rms）粗糙度约为4.58 nm。开发了Ge衬底上的Ga（In）As缓冲膜，用于制备多结太阳能电池，并获得了具有良好形貌的高性能。

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