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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Carrier Dynamics in Bulk 1eV InGaAsNSb Materials and Epitaxial Lift Off GaAs-InAlGaP Layers Grown by MOVPE for Multi-junction Solar Cells
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Carrier Dynamics in Bulk 1eV InGaAsNSb Materials and Epitaxial Lift Off GaAs-InAlGaP Layers Grown by MOVPE for Multi-junction Solar Cells

机译：多结太阳能电池的1eV InGaAsNSb块体材料和MOVPE生长的外延剥离GaAs-InAlGaP层的载流子动力学

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Ⅲ-Ⅴ multi-junction solar cells are based on a triple-junction design that consists of an InGaP top junction, a GaAs middle junction, and a bottom junction that employs either a 1eV material grown on the GaAs substrate or InGaAs grown on the Ge substrate. The most promising 1 eV material that is currently under extensive investigation is bulk dilute nitride such as InGaAsN(Sb) lattice matched to GaAs substrates. Both approaches utilizing dilute nitrides and lattice-mismatched InGaAs layers have a potential to achieve high performance triple-junction solar cells. In addition, it will be beneficial for both commercial and space applications if Ⅲ-Ⅴ triple-junction solar cells can significantly reduce weight and can be manufactured cost effectively while maintaining high efficiency. The most attractive approach to achieve these goals is to employ full-wafer epitaxial lift off (ELO) technology, which can eliminate the substrate weight and also enable multiple substrate re-usages. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates, where carrier lifetime measurements are crucial in optimizing MOVPE materials growth. We studied carrier dynamics in InGaAsN(Sb) layers with different amounts of N incorporated. Carrier lifetimes were also measured from InGaAsN(Sb) layers at different stages of post-growth thermal annealing steps. Post-growth annealing yielded significant improvements in carrier lifetimes of InGaAsNSb double hetero-structure (DH) samples compared to InGaAsN DH samples possibly due to the surfactant effect of Sb. In addition, we studied carrier dynamics in MOVPE-grown GaAs-InAl(Ga)P layers grown on GaAs substrates. The structures were grown on top of a thin AlAs release layer, which allowed epitaxial layers grown on top of the AlAs layer to be removed from the substrate. The GaAs layers had various doping densities and thicknesses. We present our TR-PL results from both pre- and post-ELO processed GaAs-InAl(Ga)P samples.
机译：Ⅲ-Ⅴ多结太阳能电池基于三结设计，该三结设计由InGaP顶部结，GaAs中间结和底部结组成，该结采用在GaAs衬底上生长的1eV材料或在Ge上生长的InGaAs基质。目前正在广泛研究的最有前途的1 eV材料是块状稀氮化物，例如与GaAs衬底匹配的InGaAsN（Sb）晶格。两种利用稀氮化物和晶格失配的InGaAs层的方法都具有实现高性能三结太阳能电池的潜力。此外，如果Ⅲ-Ⅴ三结太阳能电池能够显着减轻重量，并能在保持高效率的同时降低成本，并具有成本效益，则对商业和太空应用都将是有益的。实现这些目标的最有吸引力的方法是采用全晶圆外延剥离（ELO）技术，该技术可以消除基板重量并实现多次基板再利用。对于本研究，我们采用时间分辨光致发光（TR-PL）技术研究了与GaAs衬底匹配的MOVPE生长的块状稀氮化物层中的载流子动力学，其中载流子寿命测量对于优化MOVPE材料的生长至关重要。我们研究了掺入不同量N的InGaAsN（Sb）层中的载流子动力学。还从生长后的热退火步骤的不同阶段的InGaAsN（Sb）层测量了载流子寿命。与InGaAsN DH样品相比，生长后退火可显着提高InGaAsNSb双异质结构（DH）样品的载流子寿命，这可能是由于Sb的表面活性剂作用所致。此外，我们研究了在GaAs衬底上生长的MOVPE生长的GaAs-InAl（Ga）P层中的载流子动力学。该结构生长在薄AlAs释放层的顶部，这使生长在AlAs层顶部的外延层可以从基板上去除。 GaAs层具有各种掺杂密度和厚度。我们介绍了ELO之前和之后处理过的GaAs-InAl（Ga）P样品的TR-PL结果。

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