首页> 外文OA文献 >Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material

【2h】

Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material

机译：MOVPE生长的同质外延ZnTe层和衬底材料中的非平衡载流子动力学

页面导航

著录项
相似文献
相关主题

著录项

作者
Aleksiejunas R.; Malinauskas T.; Sudzius M.; Jarasiunas K.; Lovergine N.; Traversa M.; Prete P.; Mancini A. M.;
展开▼
作者单位

展开▼
年度 2004
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas [J] . Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2003,第Jan期

机译：氮载气通过同步辐射激发生长而生长的ZnTe同质外延层的光致发光特性
2. Activation energy and carriers dynamics of multilayer CdTe/ZnTe quantum dots with different ZnTe separation layer thicknesses [J] . Jin Sung Hwan, Kim Su Hwan, Yim Sang-Youp, Materials Research Bulletin . 2017,第pta3期

机译：不同ZnTe分离层厚度的多层CdTe / ZnTe量子点的活化能和载流子动力学
3. Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers [J] . Birgit Kallinger, Jürgen Erlekampf, Katharina Rosshirt, Materials science forum . 2019,第期

机译：基质性质对4H-SiC同性恋层中缺陷和少数载体寿命的影响
4. Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells [C] . Yongkun Sin, Stephen D. LaLumondiere, Brendan J. Foran, Physics and simulation of optoelectronic devices XX. . 2012

机译：具有变质InGaAs和InGaPSb太阳能电池的MOVPE生长的块状InGaAs层中的载流子动力学和缺陷
5. Studies of growth mechanism and defect origins in 4H-silicon carbide substrates and homoepitaxial layers. [D] . Wang, Huanhuan. 2014

机译：研究4H-碳化硅衬底和同质外延层的生长机理和缺陷来源。
6. Pronounced Impact of p-Type Carriers and Reduction of Bandgap in Semiconducting ZnTe Thin Films by Cu Doping for Intermediate Buffer Layer in Heterojunction Solar Cells [O] . Waqar Mahmood, Saif Ullah Awan, Amad Ud Din, 2019

机译：异质结太阳能电池中间缓冲层的Cu掺杂对半导体ZnTe薄膜中p型载流子的显着影响和带隙的减小
7. Ab initio calculations of ultra-short carrier dynamics in 2D materials: valley depolarization in single-layer WSe$_2$ [O] . Molina-Sánchez, Alejandro, Sangalli, Davide, Wirtz, Ludger, 2017

机译：从头计算2D材料中的超短载流子动力学：单层Wse $ _2 $中的谷去极化
8. Properties of the State of the Art of Bulk III-V Nitride Substrates and Homoepitaxial Layers [R] . Freitas, J. J. 2010

机译：体III-V氮化物衬底和同质外延层的现有技术特性

Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material

著录项

相似文献

相关主题

期刊订阅