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首页> 外文会议>Materials Research Society Meeting >Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells
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Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

机译：载体动力学和散装1EV IngaAsnsb材料的缺陷和由MPL为多结太阳能电池种植的MBL的InGaAs层

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Multi-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.
机译：多结III-V太阳能电池基于三界设计，该设计采用在GaAs衬底上生长的1EV底部结，GaAs中间结和晶格匹配的夹斗顶结。有两种可能的方法实现了三联网设计。第一种方法是利用晶格匹配的稀氮化物材料，例如IngaAsn（Sb），第二种方法是利用采用变质缓冲层（MBL）的晶格失配的ingaAs。两种方法都具有达到高性能三界太阳能电池的潜力。通过使用第一方法[1]和使用第二种方法的多结太阳能电池从多结太阳能电池实现了43.5％的记录效率，得到了41.1％的效率[2]。我们研究了散装1EV IngaAsnsb材料的载体动力学和缺陷，用Movpe为多结太阳能电池种植的MBL。

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