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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
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Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

机译：四结太阳能电池MBE生长的带1 eV带隙的InGaAsP层的载流子复合动力学

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摘要

The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple- junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.
机译：通过采用时间分辨光致发光（PL）测量，研究了带隙能量为1 eV的InGaAsP材料的载流子复合动力学，该能量用于通过固体源分子束外延生长的四结太阳能电池。对于标称未掺杂的材料，PL衰减时间随温度的升高而增加，这表明辐射复合在复合过程中起主导作用。辐射和非辐射复合时间常数是根据温度相关的PL衰减时间和积分PL强度计算得出的。通过将Be（作为p型掺杂剂）掺入材料中，PL衰减时间随温度的升高而减少，并且在材料具有更高掺杂密度的情况下，观察到双指数PL衰减曲线。制备了带隙为1 eV的基于InGaAsP的单结光伏器件，在AM1.5G太阳光谱下获得了16.4％的效率。

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