Hydrogen-related Defects In Ingap/gaas Heterojunction Bipolar Transistors

Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Katsuhiro Akimoto

首页> 外文期刊>Journal of Crystal Growth >Hydrogen-related Defects In Ingap/gaas Heterojunction Bipolar Transistors

【24h】

Hydrogen-related Defects In Ingap/gaas Heterojunction Bipolar Transistors

机译：Ingap / gaas异质结双极晶体管中与氢有关的缺陷

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A degradation mechanism in InGaP/GaAs heterojunction bipolar transistor (HBT) was investigated. The current gain of the HBT grown at a Ⅴ/Ⅲ ratio of 0.7 for the base layer decreased when annealed at 670℃. The samples grown at Ⅴ/Ⅲ ratios > 1.0 showed constant photoluminescence intensity independent of annealing temperature, indicating that high thermal stability is obtained, while the Ⅴ/Ⅲ ratios < 1.0 showed significant reductions by thermal annealing. Infrared (IR) absorption measurement revealed that the intensity of C-H and C_2-H complexes in carbon-doped GaAs decreased when annealed at > 550 and 650 ℃, respectively. We suggest that the decomposition of the C_2-H complex creates defect centers, which lead to the current gain reduction.

机译：研究了InGaP / GaAs异质结双极晶体管（HBT）的降解机理。在670℃退火时，基层的HBT以Ⅴ/Ⅲ比值0.7生长的电流增益降低。以Ⅴ/Ⅲ比率> 1.0生长的样品显示出恒定的光致发光强度，与退火温度无关，这表明获得了高的热稳定性，而Ⅴ/Ⅲ比率<1.0显示通过热退火显着降低。红外（IR）吸收测量结果表明，分别在550℃和650℃以上退火时，碳掺杂GaAs中C-H和C_2-H配合物的强度降低。我们建议C_2-H配合物的分解会产生缺陷中心，从而导致电流增益降低。

著录项

来源
《Journal of Crystal Growth》 |2008年第23期|p.5223-5226|共4页
作者
Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Katsuhiro Akimoto;
展开▼
作者单位

Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba 300-3294, Japan;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
a1. defects; a1. doping; a3. metal-organic vapor phase epitaxy; b3. bipolar transistors;

机译：a1。缺陷;a1。掺杂;a3。金属-有机气相外延;b3。双极晶体管;

相似文献

外文文献
中文文献
专利

1. Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors [J] . Wu Yi-Chen, Tsai Jung-Hui, Chiang Te-Kuang, Semiconductors . 2015,第10期

机译：InGaP / GaAs / GaAsBi与InGaP / GaAs异质结双极晶体管的比较研究
2. COMPARATIVE INVESTIGATION OF INGAP/GAAS/GAASBI AND INGAP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS [J] . WU YI-CHEN, TSAI JUNG-HUI, CHIANG TE-KUANG, Физика и техника полупроводников . 2015,第10期

机译：INGAP / GAAS / GAASBI与INGAP / GAAS异质结双极晶体管的比较研究
3. COMPARATIVE INVESTIGATION OF INGAP/GAAS/GAASBI AND INGAP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS [J] . WU YI-CHEN, TSAI JUNG-HUI, CHIANG TE-KUANG, Физика и техника полупроводников . 2015,第10期

机译：比较研究 INGAP / GAAS / GAASBI 和 INGAP / GaAs异质双极型晶体管
4. Si-related defects in InGaP/GaAs heterojunction bipolar transistors [C] . Hisashi Yamada, Noboru Fukuhara, Masahiko Hata International Conference on Defects in Semiconductors; 20070722-27; Albuquerque,NM(US) . 2007

机译：InGaP / GaAs异质结双极晶体管中与硅有关的缺陷
5. Low-pressure metalorganic chemical vapor deposition of high-gain InGaP/GaAs heterojunction bipolar transistors [D] . Yang, Qinghong (Jack). 1999

机译：高增益Ingap / GaAs异质结双极晶体管的低压金属化学气相沉积
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors [O] . Yan BP, Hsu CC, Yang ES, 2004

机译：InGap / Gaassb / Gaas双异质结双极晶体管中的电流传输机制
8. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor [R] . Chang, P. C. , Baca, A. G. , Li, N. Y. , 2000

机译：InGap / InGaasN / Gaas NpN双异质结双极晶体管

Hydrogen-related Defects In Ingap/gaas Heterojunction Bipolar Transistors

摘要

著录项

相似文献

相关主题

期刊订阅