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首页> 外文期刊>Journal of Crystal Growth >Growth And Characterization Of Zngep_2 Single Crystals By The Modified Bridgman Method
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Growth And Characterization Of Zngep_2 Single Crystals By The Modified Bridgman Method

机译：修正布里奇曼法生长Zngep_2单晶及其表征

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摘要

A good quality ZnGeP_2 (ZGP) single crystal 15mm in diameter and 40mm in length was grown in a vertical three-zone tubular furnace by the modified Bridgman method, i.e. real-time temperature compensation technique (RTTCT) with descending ampoule. The starting material is high-pure and single-phase polycrystal of ZnGeP_2 synthesized by the single-temperature zone and mechanical oscillation method (STZMOM). The as-grown single crystal was characterized by various methods, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analyzer of X-ray (EDAX), and IR and UV spectrophotometers. It is found that there is a cleavage face of (1 1 2) and second-order XRD peaks of the {1 1 2} faces are observed, the IR transmittance of a sample of 2 mm thickness is above 55% in the range from 6000 to 800 cm~(-1), the absorption edge is near 612.5 nm and the band gap is about 2.02 eV. The absorption coefficient (α) is within 0.015-0.022 cm~(-1) at the spectral region 2-8 μm. The crystal has a stoichiometry ratio Zn:Ge:P=1:1.12:1.9l which is close to the ideal stoichiometry ratio of 1:1:2. All results demonstrate that the modified growth method is a new and promising method for the ZGP single crystal and the quality of as-grown crystal is good.
机译：通过改进的Bridgman方法（即实时温度补偿技术（RTTCT）和安瓿瓶下降法），在立式三区管式炉中生长出直径15mm，长度40mm的优质ZnGeP_2（ZGP）单晶。起始原料是通过单温度区和机械振荡法（STZMOM）合成的ZnGeP_2高纯单相多晶。所生长的单晶可用各种方法进行表征，包括X射线衍射（XRD），扫描电子显微镜（SEM），X射线能量色散分析仪（EDAX）以及红外和紫外分光光度计。发现存在（1 1 2）的解理面，并且观察到{1 1 2}面的二阶XRD峰，厚度为2 mm的样品的红外透射率在55％以上的范围内。 6000〜800 cm〜（-1），吸收边在612.5 nm附近，带隙约为2.02 eV。在光谱区域2-8μm处的吸收系数（α）在0.015至0.022cm-1（-1）内。晶体的化学计量比Zn：Ge：P ＝ 1：1.12：1.9l接近于理想的化学计量比1：1：2。所有结果表明，改进的生长方法是ZGP单晶的一种新的有前途的方法，并且生长的晶体质量良好。

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