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首页> 外文期刊>Journal of Crystal Growth >Influence of Ⅴ/Ⅲ flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD
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Influence of Ⅴ/Ⅲ flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD

机译：Ⅴ/Ⅲ通量比对MOCVD生长的AlInGaN / Gan异质结构电学性能的影响

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摘要

The electrical properties of AlInGaN/GaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition under different Ⅴ/Ⅲ flux ratios from 3880 to 9082 were investigated. Rutherford backscattering and channeling were used to determine the composition and to evaluate crystalline quality of AlInGaN quaternary epilayers. Hall measurements at room temperature and 77 K showed that less sheet concentration and higher electron mobility were in lower Ⅴ/Ⅲ ratio samples. An intense photoluminescence at 351 nm with a narrow FWHM about 48.3meV was assigned to be from Al_(0.08)In_(0.015)Ga_(0.905)N layer grown under 3880 Ⅴ/Ⅲ flux ratio. With a comparison of Raman spectra of wafers of different Ⅴ/Ⅲ flux ratios and membranes on Si, local strain in AlInGaN layers were also discussed. Point defects were considered to be related with large local stress in GaN template layer under AlInGaN of high Ⅴ/Ⅲ flux ratio, which may decrease the electron mobility in AlInGaN/GaN heterostructures.
机译：研究了在3880〜9082之间不同的Ⅴ/Ⅲ通量比下，金属有机化学气相沉积在蓝宝石衬底上生长的AlInGaN / GaN异质结构的电学性质。卢瑟福背散射和沟道用于确定AlInGaN第四外延层的组成并评估其晶体质量。在室温和77 K下的霍尔测量结果表明，在较低的Ⅴ/Ⅲ比样品中，薄板浓度较低，电子迁移率较高。 351nm处的强光致发光和约48.3meV的窄FWHM被指定为来自在3880Ⅴ/Ⅲ通量比下生长的Al_（0.08）In_（0.015）Ga_（0.905）N层。通过比较不同Ⅴ/Ⅲ通量比的晶片和硅膜的拉曼光谱，讨论了AlInGaN层的局部应变。点缺陷被认为与高Ⅴ/Ⅲ通量比的AlInGaN下GaN模板层中的大局部应力有关，这可能会降低AlInGaN / GaN异质结构中的电子迁移率。

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