...
首页> 外文期刊>Journal of Crystal Growth >Catalyst-free fabrication of InP and InP(N) nanowires by metalorganic vapor phase epitaxy
【24h】

Catalyst-free fabrication of InP and InP(N) nanowires by metalorganic vapor phase epitaxy

机译:金属有机气相外延法无催化剂制备InP和InP(N)纳米线

获取原文
获取原文并翻译 | 示例
           

摘要

The fabrication and properties of metalorganic vapor phase epitaxy grown InP and InP(N) nanowires on InP(111)B substrates are investigated. Nanowires are grown catalyst-free using in situ deposited In droplets as seeds for nanowire growth. It is shown that the resulting nanowire diameter can be controlled by the droplet deposition temperature. Moreover, the nanowire shape is strongly affected by the Ⅴ/Ⅲ molar ratio. Nanowires grown using this method are optically active exhibiting a room-temperature photoluminescence peak at 1.37 eV, slightly blue-shifted from the band gap energy of bulk zinc-blende InP. No significant nitrogen incorporation in the nanowires was observed when nitrogen precursor was added in the gas phase.
机译:研究了在InP(111)B衬底上金属有机气相外延生长的InP和InP(N)纳米线的制备和性能。使用原位沉积的In液滴作为纳米线生长的种子,使纳米线无催化剂生长。已经表明,所得的纳米线直径可以通过液滴沉积温度来控制。而且,Ⅴ/Ⅲ摩尔比对纳米线的形状有很大的影响。使用这种方法生长的纳米线具有光学活性,在1.37 eV处显示出室温的光致发光峰,该峰与块状掺锌InP的带隙能量略微蓝移。当在气相中添加氮前体时,未观察到纳米线中显着的氮结合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号