Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources

M. Sawada; M. Sawadaishi; H. Yamamoto; M. Arai; T. Honda

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Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources

机译：以GaN粉和氨为源的GaN化合物源分子束外延

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摘要

Compound-source molecular beam epitaxy (CS-MBE) of GaN layers using GaN powder and ammonia as sources is discussed. In particular, the reduction of excess Ga in GaN layers by introducing ammonia supply is discussed on the basis of their refraction high-energy electron diffraction (RHEED) patterns, X-ray photoelectron spectroscopy (XPS) spectra and atomic force microscopy (AFM) images. It was clarified that the ammonia supply is effective for the high growth rate of GaN layers and for the reduction of their oxygen concentration. During the growth, the surface migration of Ga atoms is limited by the ammonia supply.

机译：讨论了以GaN粉和氨为源的GaN层的化合物源分子束外延（CS-MBE）。特别是，基于其氨的折射高能电子衍射（RHEED）模式，X射线光电子能谱（XPS）光谱和原子力显微镜（AFM）图像，讨论了通过引入氨气供应来减少GaN层中多余的Ga的方法。。明确了氨供给对于GaN层的高生长速率及其氧浓度的降低是有效的。在生长过程中，Ga原子的表面迁移受到氨气供应的限制。

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来源
《Journal of Crystal Growth》 |2007年第4期|p.67-70|共4页
作者
M. Sawada; M. Sawadaishi; H. Yamamoto; M. Arai; T. Honda;
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作者单位

Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. AFM; A1. RHEED; A1. XPS; A3. MBE; B1. Ammonia; B1. GaN; B1. Si substrate;

机译：A1。原子力显微镜;A1。 RHEED;A1。 XPS;A3。 MBE;B1。氨;B1。氮化镓;B1。硅基板;

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专利

1. Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy [J] . Tohru Honda, Masaru Sawada, Toshiaki Kobayashi, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：复合源分子束外延在低温下生长的GaN薄膜的光致发光光谱
2. GaN films deposited at low temperature on (111)Si by compound-source molecular beam epitaxy technique [J] . T. Honda, Y. Aoki, M. Akiyama, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2005,第4期

机译：通过化合物源分子束外延技术在（111）Si上低温沉积GaN膜
3. Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy [J] . Sukrittanon S., Kuang Y.J., Dobrovolsky A., Applied Physics Letters . 2014,第7期

机译：稀氮化物GaN x P 1-x 纳米线和GaN x P 1-x / GaN的生长和表征气源分子束外延作用在Si（111）上的 y P 1-y 核/壳纳米线
4. Compound-source Molecular Beam Epitaxy of GaN on Si at Low Temperature Using GaN Powder and Ammonia as Sources [C] . Tohru Honda, Masaru Sawada, Hiromi Yamamoto, Materials Research Society Symposium on Advances in III-V Nitride Semiconductor Materials and Devices . 2006

机译：使用GaN粉末和氨作为源的低温GaN对Si的复方源分子束外延
5. Structure, morphology, and kinetics of GaN film growth using gas-source and RF plasma-assisted metal-organic molecular beam epitaxy [D] . Woll, Arthur Randall 2000

机译：使用气体源和RF等离子体辅助金属 - 有机分子束外延对GaN薄膜生长的结构，形态和动力学
6. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy [O] . Yongjin Wang, Fangren Hu, Kazuhiro Hane 2011

机译：分子束外延在独立式GaN光栅上InGaN / GaN量子阱的图案生长
7. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy [O] . Tang, H., Fang, Z.Q., Rolfe, S., 2010

机译：氨分子束外延生长无意掺杂的SiC半绝缘GaN和蓝宝石上的高电阻GaN的生长动力学和电子性质

Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources

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