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首页> 外文期刊>Journal of Crystal Growth >Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy
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Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy

机译：通过迁移增强外延生长的重掺杂Sn的GaAs的表征

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摘要

The saturation of electron concentration and mobility at high doping concentration observed in the samples grown by low-temperature migration-enhanced epitaxy (MEE) is found to be strongly related to the morphology change in the film. The structural characteristics of the heavily Sn-doped GaAs have been further investigated by means of X-ray diffraction (XRD) measurement and transmission electron microscopy (TEM). The results indicate that the (GaAs)_(1-x)(Sn_2)_x alloy is formed in the Sn-doped GaAs with the doping concentration higher than 1 x 10~(19) cm~(-3). However, when the Sn concentration exceeds 1 x 10~(21) cm~(-3), the formation of Sn-rich clusters becomes dominant. This formation of (GaAs)_(1-x)(Sn_2)_x alloy and Sn clusters is found to be responsible for the saturation of the electron concentration and mobility in the heavily doped samples.
机译：发现通过低温迁移增强外延（MEE）生长的样品中观察到的电子浓度和高掺杂浓度下的迁移率饱和与薄膜的形态变化密切相关。借助X射线衍射（XRD）测量和透射电子显微镜（TEM）进一步研究了重掺杂Sn的GaAs的结构特征。结果表明，在Sn掺杂GaAs中形成了（GaAs）_（1-x）（Sn_2）_x合金，其掺杂浓度高于1 x 10〜（19）cm〜（-3）。但是，当Sn浓度超过1×10〜（21）cm〜（-3）时，富Sn簇的形成成为主要。发现（GaAs）_（1-x）（Sn_2）_x合金和Sn团簇的形成是造成重掺杂样品中电子浓度和迁移率饱和的原因。

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