Modelling of group-Ⅲ nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

C. Martin; M. Dauelsberg; H. Protzmann; A.R. Boyd; E.J. Thmsh; M. Heuken; R.A. Talalaev; E.V. Yakovlev; A.V. Kondratyev

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Modelling of group-Ⅲ nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

机译：封闭耦合喷头反应器和PlanetaryReactor®中的Ⅲ族氮化物MOVPE建模

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The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-Ill nitride compounds GaN and InGaN. The paper also deals with the development of group-Ⅲ nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for Ill-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42 × 2" Planetary Reactor®.

机译：商业化，生产规模的多晶片反应器中氮化物生长过程的建模和随后的实验验证，着眼于III族氮化物GaN和InGaN。本文还研究了在较高的工艺压力下Ⅲ族氮化物生长工艺的发展，强调了气相成核现象对GaN生长效率的影响。此外，还介绍了PlanetaryReactor®技术的最新硬件和工艺改进，重点是通过建模方法开发适用于氮化物生长的新型气体喷射器设计。对于42×2“ PlanetaryReactor®，将证明新喷射器设计的后续实验验证以及其对于改变GaN和InGaN工艺方案的灵活性。

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来源
《Journal of Crystal Growth》 |2007年第1期|318-322|共5页
作者
C. Martin; M. Dauelsberg; H. Protzmann; A.R. Boyd; E.J. Thmsh; M. Heuken; R.A. Talalaev; E.V. Yakovlev; A.V. Kondratyev;
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作者单位

AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Computer simulation; A3. Closed coupled showerhead reactor; A3. Metal organic vapor-phase epitaxy; A3. Planetary Reactorreg; B1. Nitrides;

机译：A1。计算机仿真;A3。封闭式耦合喷头反应器;A3。金属有机气相外延;A3。 PlanetaryReactor®B1。氮化物;

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专利

1. Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor~® [J] . C. Martin, M. Dauelsberg, H. Protzmann, Journal of Crystal Growth . 2007,第1期

机译：封闭耦合喷淋头反应器和Planetary Reactor〜®中III型氮化物MOVPE的建模
2. Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors [J] . M. Dauelsberg, C. Martin, H. Protzmann, Journal of Crystal Growth . 2007,第Jan期

机译：紧密耦合的喷淋头和行星反应堆中接近大气压的III型氮化物MOVPE的建模和工艺设计
3. Modeling and process design of Ill-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors [J] . M. Dauelsberg, C. Martin, H. Protzmann, Journal of Crystal Growth . 2007,第Jan期

机译：紧密耦合的喷淋头和行星反应堆中接近大气压的III族氮化物MOVPE的建模和工艺设计
4. MOVPE GROWTH OF III-V SOLAR CELLS ON SILICON IN 300MM CLOSED COUPLED SHOWERHEAD REACTOR [C] . T. Roesener, H. Doescher, A. Beyer, European Photovoltaic Solar Energy Conference and Exhibition . 2010

机译：300mm闭合耦合淋浴喷头反应器中硅的III-V太阳能电池的MOVPE生长
5. A simplified model of planetary chemical vapor deposition reactors. [D] . Shahshahan, Negin. 2009

机译：行星化学气相沉积反应器的简化模型。
6. Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth [O] . Robert Czernecki, Karolina Moszak, Wojciech Olszewski, 2019

机译：MOVPE紧密耦合喷头反应器中的喷头-样品距离（GAP）对GaN生长的影响
7. Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth [O] . Robert Czernecki, Karolina Moszak, Wojciech Olszewski, 2019

机译：淋浴喷头 - 样本距离（间隙）在Movpe关闭耦合淋浴喷头反应器对GaN生长的影响

Modelling of group-Ⅲ nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

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