Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

R. Collazo; S. Mita; A. Aleksov; R. Schlesser; Z. Sitar

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Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

机译：通过金属有机气相外延在蓝宝石晶片上生长Ga和N极性氮化镓层

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Following an already established polarity control scheme for GaN thin films, we developed a process to simultaneously grow Ga- and N-polarity layers side by side on c-plane sapphire. The simultaneous growth is achieved by properly treating the A1N nucleation/buffer layer and subsequent substrate annealing. During this process, the growth is mass-transfer-limited, permitting the same growth rate for both types of polarity domains. Smooth domains of both polarity types (RMS roughness ～1-2nm) were obtained.

机译：根据已经建立的用于GaN薄膜的极性控制方案，我们开发了一种在c面蓝宝石上并排生长Ga和N极性层的工艺。通过适当地处理AlN成核/缓冲层和随后的基板退火，可以实现同时生长。在此过程中，生长受到传质限制，两种极性域的生长速率相同。获得了两种极性类型（RMS粗糙度〜1-2nm）的光滑区域。

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来源
《Journal of Crystal Growth》 |2006年第2期|p.586-590|共5页
作者
R. Collazo; S. Mita; A. Aleksov; R. Schlesser; Z. Sitar;
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作者单位

Department of Materials Science and Engineering, North Carolina State University, Campus Box 7919, Raleigh, NC 27695-7919, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Crystal strcture; A3. Chemical vapor deposition process; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A1。晶体结构;A3。化学气相沉积工艺;A3。金属有机化学气相沉积;B1。氮化物;B2。半导体Ⅲ-Ⅴ材料;

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专利

1. Basic Studies of Gallium Nitride Growth on Sapphire by Metalorganic Chemical Vapor Deposition and Optical Properties of Deposited Layers [J] . R. NIEBUHR, K. BACHEM, K. DOMBROWSKI, Journal of Electronic Materials . 1995,第11期

机译：金属有机化学气相沉积和沉积层的光学特性在蓝宝石上生长氮化镓的基础研究
2. Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy [J] . Xue-Feng Han, Min-Jae Hur, Jae-Hak Lee, Journal of Crystal Growth . 2014,第nova15期

机译：商业化多晶圆氢化物气相外延在6英寸晶圆上生长的氮化镓薄膜层的数值模拟
3. High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy [J] . Yuantao Zhang, Xin Dong, Guoxing Li, Journal of Crystal Growth . 2013,第MARa1期

机译：金属有机气相外延法在c面蓝宝石上高质量生长N极性GaN二维
4. Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy [C] . H. P. D. SCHENK, E. FELTIN, M. VAILLE, Fourth International Conference on Nitride Semiconductors . 2002

机译：金属有机气相外延生长在Si（111）上的声学和光学氮化镓波导
5. Growth via low pressure metalorganic vapor phase epitaxy and surface characterization of gallium nitride and indium gallium nitride thin films. [D] . Miraglia, Peter Quinn. 2001

机译：通过低压金属有机气相外延生长以及氮化镓和氮化铟镓薄膜的表面特性。
6. Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate [O] . Hoki Son, Ye-ji Choi, Soon-Ku Hong, 2021

机译：卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
7. Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process [O] . Haixiao Hu, Baoguo Zhang, Lei Liu, 2020

机译：通过直接在连续氢化物气相外延（HVPE）过程中直接形成的多肽中间层（GaN）的自由型氮化镓（GaN）的生长
8. System for Bulk Growth of Gallium Nitride. Vapor Phase Epitaxy of Gallium Nitride by Gallium Arc Evaporation [R] . Heikman, S. J. , Mishra, U. K. 2005

机译：镓弧蒸发系统氮化镓气相氮化物生长氮化镓的研究。

Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

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