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首页> 外文期刊>Journal of Crystal Growth >Single domain structure and two-color holographic recording in LiNbO_3:Cu:Ce crystals grown by the vertical Bridgman method
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Single domain structure and two-color holographic recording in LiNbO_3:Cu:Ce crystals grown by the vertical Bridgman method

机译：垂直布里奇曼法生长LiNbO_3：Cu：Ce晶体中的单畴结构和双色全息记录

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摘要

Single domain LiNbO_3:Cu:Ce crystal was grown for the first time by the vertical Bridgman (VB) method without applying any external electric field on the crystal during and after the growth process. The mechanism of single domain formation is discussed qualitatively. The Li ion diffusion in the crystal, low segregation coefficients of Cu and Ce and low radial temperature gradient could be the main reasons that caused the single domain structure of the as-grown crystal. The single domain structure was checked by etching with HF:HNO_3 (1:2) mixture and performing two-color holographic recording experiments on the as-grown crystal samples. The two-color recording performance of the crystal was studied by using an ordinary polarization He-Ne laser (632.8 nm) as recording light and an UV lamp (300-400 nm) as gating light. Nonvolatile readout was realized in the VB-grown LiNbO_3:Cu:Ce crystal with a sensitivity of 0.0042 cm/J. A high diffraction efficiency of 12% was achieved.
机译：单畴LiNbO_3：Cu：Ce晶体是通过垂直Bridgman（VB）方法首次生长的，并且在生长过程中和生长之后均未在晶体上施加任何外部电场。定性讨论了单域形成的机理。锂离子在晶体中的扩散，低的铜和铈的偏析系数以及较低的径向温度梯度可能是造成晶体生长的单畴结构的主要原因。通过用HF：HNO_3（1：2）混合物蚀刻并在生长的晶体样品上进行双色全息记录实验来检查单畴结构。通过使用普通偏振He-Ne激光（632.8 nm）作为记录光和UV灯（300-400 nm）作为门控光来研究晶体的双色记录性能。在VB生长的LiNbO_3：Cu：Ce晶体中实现了非易失性读出，灵敏度为0.0042 cm / J。达到了12％的高衍射效率。

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