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首页> 外文期刊>Journal of Crystal Growth >The surface modification of Si(1 1 1) substrates with SiN_x for the growth high quality β-SiC epilayers
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The surface modification of Si(1 1 1) substrates with SiN_x for the growth high quality β-SiC epilayers

机译：用SiN_x对Si（1 1 1）衬底进行表面改性，以生长高质量的β-SiC外延层

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摘要

Single crysal βSiC(1 1 1) epilayers were grown on Si(1 1 1) substrates whose surface had been modified with SiN_x. When the SiC epilayers were grown on clean Si surfaces, voids were observed in the silicon side of the SiC/Si interface. Their formation was attributed to the out-diffusion of Si atoms from the Si substrate during the growth of the SiC epilayer. But void-free SiC epilayers with a flat and smooth interface were grown on Si surfaces nitrided for times longer than 30 min. Crystalline quality of β-SiC grown on a Si substrate intruded for 60 min was better than that grown on a clean Si substrate. The silicon nitride films completely suppressed the formation of voids even for an extended growth time of 300 min.
机译：单晶βSiC（1 1 1）外延层生长在表面经过SiN_x修饰的Si（1 1 1）衬底上。当SiC外延层在干净的Si表面上生长时，在SiC / Si界面的硅侧观察到空隙。它们的形成归因于在SiC外延层的生长期间Si原子从Si衬底向外扩散。但是具有平坦和光滑界面的无空隙SiC外延层生长在氮化了30分钟以上的氮化硅表面上。在侵入60分钟的Si衬底上生长的β-SiC的晶体质量要好于在干净的Si衬底上生长的β-SiC的晶体质量。即使延长了300分钟的生长时间，氮化硅膜也完全抑制了空隙的形成。

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