Modified GaSe crystals for mid-IR applications

N.B. Singh; D.R. Suhre; W. Rosch

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Modified GaSe crystals for mid-IR applications

机译：用于中红外应用的改性GaSe晶体

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摘要

We have synthesized stoichiometric batches of GaSe by reacting maxutre of the parent components and have grown centimeter-size modified signle crystals of GaSe by the vertical Bridgman technique. GaSe crystal doped with silver, indium and silver gallium seleinde were fabricted for wavelenthg conversion. Silver doping produced scattering centers which could be dissolved by annealing at temepratures above 700 deg C. Crystals cracked exensively during the annealing process and optical qualtiy detriorated. SHG measuremets of In-doped crystals showed a "d" value of 49 pm/V for low concentrtion In-doped GaSe crystals. The silver galium selenide oped GaSe crystals showed a "d" value of 75 pm/V which resulted in significant increase in he ?d~2~3".

机译：我们已经通过使母体组分发生最大反应来合成了GaSe的化学计量批次，并通过垂直Bridgman技术生长了厘米大小的GaSe修饰型符号晶体。制备掺杂有银，铟和硒化银硒化镓的GaSe晶体用于波长转换。银掺杂产生散射中心，该散射中心可通过在700摄氏度以上的温度退火而溶解。晶体在退火过程中破裂严重，光学质量降低。对于低浓度的In掺杂的GaSe晶体，In掺杂的晶体的SHG测量仪显示的“ d”值为49 pm / V。硒化银镓镓制成的GaSe晶体的“ d”值为75 pm / V，导致hedd〜2 / n〜3显着增加。

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来源
《Journal of Crystal Growth》 |1999年第1期|p.588-592|共5页
作者
N.B. Singh; D.R. Suhre; W. Rosch;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Nonlinear; Gallium selenide; Second harmonic; Solid-solution; Bridgman;

机译：非线性硒化镓;二次谐波实在的方法;布里奇曼;

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Modified GaSe crystals for mid-IR applications

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