Growth and characterization of LiNbO_3 thin films obtianed by liquid pahse epitaxy on Li_xNb_1-xO_3

V. Bermudez; M.D. Serrano; E. Dieguez

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Growth and characterization of LiNbO_3 thin films obtianed by liquid pahse epitaxy on Li_xNb_1-xO_3

机译：Li_xNb_1-xO_3上的液相帕希斯外延生长的LiNbO_3薄膜的生长和表征

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LiNbO_3 thin films have been grown on Li_xNb_1-xO_3 substrates by the dipping liquid phase epitaxy techqiue from a Li_xNb_1-xVO_3 flux. The composition of the substrates was varied form being congurent to near stoichiometric. The growth parameters like temeprature and time, have been optimized in order to obtain high quality thin films. The thin films crytallinity, lattice mismatch and composition have been optmizeld in order to obtain high qualtiy thin films. The thin films crsytallinity, lattice mismatch and composition have been studied in order to improve the quality of the films.

机译：通过从Li_xNb_1-xVO_3助熔剂中浸入液相外延技术，在Li_xNb_1-xO_3衬底上生长了LiNbO_3薄膜。底物的组成变化形式接近于化学计量。为了获得高质量的薄膜，已经优化了诸如温度和时间的生长参数。为了获得高质量的薄膜，已经优化了薄膜的结晶度，晶格失配和组成。为了改善薄膜的质量，已经研究了薄膜的结晶度，晶格失配和组成。

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来源
《Journal of Crystal Growth》 |1999年第1期|p.526-530|共5页
作者
V. Bermudez; M.D. Serrano; E. Dieguez;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Lithium niobate; LPE; Stoichiometric;

机译：铌酸锂;LPE;化学计量的;

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1. Direct-write e-beam sub-micron domain engineering in liquid phase epitaxy (LPE) LiNbO_3 thin films and single crystal LiNbO_3 [J] . J. Son, Y. Yuen, S.S. Orlov, Journal of Crystal Growth . 2005,第1a2期

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2. Letter to the editor: Surface and structure characteristics of ZnO co-doped LiNbO_3:Er thin films grown by liquid phase epitaxy method [J] . J.B. Shim, N. Yoshimoto, D.H. Yoon Journal of Crystal Growth . 2002,第1a4期

机译：致编辑的信：液相外延法生长的ZnO共掺杂LiNbO_3：Er薄膜的表面和结构特征
3. Compositional study of LiNbO_3 thin films grown by liquid phase epitaxy [J] . D.Callejo, S.Manotas, M.D.Serrano Journal of Crystal Growth . 2001,第4期

机译：液相外延生长LiNbO_3薄膜的组成研究
4. Direct-Write e-beam Sub-Micron Domain Engineering in Liquid Phase Epitaxy LiNbO_3 Thin Films [C] . Solid State Photonics Lab, Stanford University, Stanford, Integrated Optics: Devices, Materials, and Technologies IX . 2005

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5. Growth via low pressure metalorganic vapor phase epitaxy and surface characterization of gallium nitride and indium gallium nitride thin films. [D] . Miraglia, Peter Quinn. 2001

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8. Use of Alternative Solvents for the Low-Temperature LPE (Liquid Phase Epitaxy) Growth of CdTe Films. [R] . Astles, M., Blackmore, G., Gordon, N., 1984

机译：替代溶剂用于CdTe薄膜的低温LpE（液相外延）生长。

Growth and characterization of LiNbO_3 thin films obtianed by liquid pahse epitaxy on Li_xNb_1-xO_3

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