...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >MBE growth of novel MgSe/ZnSeTe:N II-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes
【24h】

MBE growth of novel MgSe/ZnSeTe:N II-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes

机译：InP衬底上新型MgSe / ZnSeTe：N II-VI复合超晶格准四元共聚物的MBE生长及其在发光二极管中的应用

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Novel MgSe/ZnSeTe:N II-VI compound superlattice quaternaries (SL-QQs) were grwon on InP substrrates by molecular beam epitaxy with p-type doping using a RF-radical nitrogen source. The SL-QQs with various equivalent Mg compositions (x_Mg) were prepared by changing the MgSe layer compostion in the superlattice. The photoluminescence peak energy at 15 K increased from 2.11 to 2.68 eV with increasign x_Mg from 0 to 0.76. A hole concentration over 2×10~18 cm~-3 was obtained for x_Mg of 0.14, and the doping level monotonically decreased with increasing x_Mg. By changin the doping process, the doping property was improved, and a hole concentration of about 3×10~17 cm~-3 was realized even for x_Mg of 0.4 ZnCdSe/MgZnCdSe(Te) lith emitting diodes were fabricated on InP substrates using MgSe/ZnSeTe SL-QQs as p-side cladding laeyrs. Yellow light emissions around 577 nm were observed under a pulsed current injection at 77 K.
机译：新型的MgSe / ZnSeTe：N II-VI复合超晶格四级原子（SL-QQs）通过分子束外延和RF氮源的p型掺杂在InP基体上生长。通过改变超晶格中的MgSe层组成来制备具有各种等效Mg组成（x_Mg）的SL-QQ。在15 K处的光致发光峰值能量从2.11 eV增加到2.68 eV，而x_Mg从0增加到0.76。当x_Mg为0.14时，空穴浓度超过2×10〜18 cm〜-3，并且随着x_Mg的增加，掺杂水平单调降低。通过改变掺杂工艺，改善了掺杂性能，并且即使使用MgSe在InP衬底上制造了0.4 ZnCdSe / MgZnCdSe（Te）发光二极管，也实现了约3×10〜17 cm〜-3的空穴浓度。 / ZnSeTe SL-QQs作为p侧熔覆层。在77 K的脉冲电流注入下观察到约577 nm的黄光发射。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号