...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >A gas-source MBE growth study of strained Ga_1-xIn_xP layers on GaAs
【24h】

A gas-source MBE growth study of strained Ga_1-xIn_xP layers on GaAs

机译：GaAs应变Ga_1-xIn_xP层的气源MBE生长研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The growht of strained Ga_1-xIn_xP alloys on GaAs substrate with the indium composition varying from 0 (GaP) to 1 (InP) was studied by means of reflection high-energy electron diffraction (RHEED). Compressive laeyrs (x>0.48) exhibit an InGaAs-like behavior. Below 2/100 misfit strain (x≤0.75) plastic relaxation occurs before the 2D-3D growth mode transition for which the lattice parameter relaxatoin is observed directly on the RHEED pattern. However, growth temperature has not a strong inflece on the relaxation behavior as in the InGaAs/InP system. On the other hand, if layers under tensile strain have a normal behavior at low temeprautre, the critical thickness is found ot be independent of the composition for x<0.35 at high tempoerature (520 deg C). This unusual behavior, as comapred ot strained InGaAs on InP layers for instance, could be associated to a spinodal decomposiiton of the GaInP alloy.
机译：通过反射高能电子衍射（RHEED）研究了铟成分从0（GaP）到1（InP）变化的GaAs衬底上应变Ga_1-xIn_xP合金的生长。压缩层（x> 0.48）表现出类似InGaAs的行为。低于2/100失配应变（x≤0.75）时，在2D-3D生长模式转变之前会发生塑性松弛，为此，在RHEED图案上直接观察到晶格参数松弛。但是，生长温度并没有像InGaAs / InP系统中那样强烈地影响弛豫行为。另一方面，如果处于拉伸应变下的层在低温度下具有正常行为，则发现临界厚度与高温（520℃）下x <0.35的成分无关。这种不寻常的行为，例如在InP层上共同应变的InGaAs，可能与GaInP合金的旋节线分解有关。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号