Novel prospects for self-assembled InAs/GaAs quantum boxes

J.M. Gerard; A. Lemaitre; B. Legrand

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Novel prospects for self-assembled InAs/GaAs quantum boxes

机译：自组装InAs / GaAs量子盒的新前景

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We present recent optical data obtianed on isolated self-assembled IOnAs quantum boxes (QBs) as well as strongly coupled QBs. We show that, owiong to their specific properites (ability to capture and localize charge carriers, atom-like emission under weak excitation...), InAs self-assembled QBs open unique opportunities for such important fields as light emission at 1.3μm on GaAs substrate, light emission on Si substrate, or the generation of non-classical states of light usiong QBs in optical microcavities.

机译：我们目前提出隔离的自组装IOnAs量子盒（QBs）以及强耦合的QBs上最近的光学数据。我们显示，由于其特定的特性（捕获和定位电荷载流子的能力，弱激发下的原子状发射……），InAs自组装量子阱为诸如GaAs上1.3μm的发光等重要领域提供了独特的机会基板，Si基板上的发光或光学微腔中usb量子点的非经典状态的产生。

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《Journal of Crystal Growth》 |1999年第5期|p.1109-1116|共8页
作者
J.M. Gerard; A. Lemaitre; B. Legrand;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
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1. Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots [J] . Ming Gong, Kaimin Duan, Chuan-Feng Li, Physical review. B, Condensed Matter And Materials Physics . 2008,第4期

机译：自组装InAs / InP量子点的电子结构：与自组装InAs / GaAs量子点的比较
2. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices [J] . Asano Tetsuya, Fang Zhaoqiang, Madhukar Anupam Journal of Applied Physics . 2010,第7期

机译：GaAs（001）/ InAs / InGaAs / GaAs自组装量子点结构中的深能级及其对量子点器件的影响
3. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices [J] . Tetsuya Asano, Zhaoqiang Fang, Anupam Madhukar Journal of Applied Physics . 2010,第7期

机译：GaAs（001）/ InAs / InGaAs / GaAs自组装量子点结构中的深能级及其对量子点器件的影响
4. Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors [C] . Xiaodong Mu, Yujie J. Ding, Zhiming Wang, Conference on Lasers and Electro-Optics . 2003

机译：通过使用自组装的INAS量子点作为压力源形成InGaAs / GaAs量子阱点
5. Molecular beam epitaxical growth of strained InAs island quantum boxes on GaAs (100): Growth kinetics, vertical self-organization, and lasing characteristics [D] . Xie, Qianghua 1996

机译：GaAs（100）上应变InAs岛量子盒的分子束外延生长：生长动力学，垂直自组织和激光特性
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较

Novel prospects for self-assembled InAs/GaAs quantum boxes

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