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首页> 外文期刊>Journal of Crystal Growth >Etch pit study of different crystallographic faces of L-arginine hydrobromice monohydrate (LAHBr) in some organic acids
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Etch pit study of different crystallographic faces of L-arginine hydrobromice monohydrate (LAHBr) in some organic acids

机译:某些有机酸中L-精氨酸氢溴酸盐一水合物(LAHBr)不同晶体面的腐蚀坑研究

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摘要

Etching characteristics of (1 0 0), (0 1 0), (0 0 1), and (1 1 0) surfaces of an important nonlinear crystal `L-arginine hydrobromide monohydratre' etched in organic acids have been investigated. It has been found that FeCl_3 added to propionic aicd reduces the tangential etch rate of (1 0 0) and (0 0 1) surfaces. Fast etchants could produce etch pits only on `F' faces, i.e. (1 0 0), (0 0 1) but they have no effect on `S' face, i.e. (0 1 0).
机译:研究了在有机酸中腐蚀的重要非线性晶体“ L-精氨酸氢溴酸盐一水合物”的(1 0 0),(0 1 0),(0 0 1)和(1 1 0)表面的蚀刻特性。已经发现添加到丙酸中的FeCl 3降低了(1 0 0)和(0 0 1)表面的切向蚀刻速率。快速蚀刻剂只能在“ F”面(即(1 0 0),(0 0 1))上产生蚀刻坑,但对“ S”面(即(0 1 0))没有影响。

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