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首页> 外文期刊>Journal of Crystal Growth >SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition
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SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition

机译：减压化学气相沉积中的SiGe高温生长动力学

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We have studied, at 20 Torr, the high-temperature growth kinetics of SiGe using a dichlorosilane + germane + hydrochloric acid chemistry. Adding HCl leads at 850degreesC to a slight increase in the germanium content x of SiGe layers. Its dependence on the F(GeH4)/F(SiH2Cl1) mass flow ratio is well accounted for by a x/(1 - x) = m(F(GeH4)/F(SiH2Cl2) relationship, with m increasing from 2.41 (no HCl) to 2.77 (F(HCl)/F(H-2) = 0.00833). The SiGe growth rate increases slightly, and then stabilizes as the GeH4 flow increases. This is attributed for low GeH4 flows to an increased hydrogen desorption caused by the presence of Ge atoms on the growing surface that frees nucleation sites for the incoming Ge and Si atoms. For high GeH4 flows, we are at 850degreesC in a supply-limited regime, where the growth rate is limited by the amount of gaseous precursors on the growing surface. Adding some HCl leads at 850degreesC to a strong decrease of the SiGe growth rate. The influence of the growth temperature between 750 and 950degreesC on the SiGe growth kinetics can schematically be described as follows: (i) The Ge concentration decreases for given amounts of SiH2Cl2 and GeH4 as the growth temperature increases (at least for Ge contents less than or equal to 25 %), which is reflected by an m parameter value decreasing from 2.43 (800degreesC to 1.71 (950degreesC). (ii) The SiGe growth rate increases as the GeH4 and/or the growth temperature increases; for high GeH4 flows and/or high temperatures we are in a supply-limited regime, whereas for low GeH4 flows and/or low temperatures we are in a surface hydrogen-desorption-limited regime. Playing with the absolute values of the SiH2Cl2 and GeH4 flows (in order to have access to both low and high F(GeH4)/F(SiH2Cl2) + F(GeH4) mass flow ratios) and the growth temperature, we have been able to gain access to a very large Ge concentration range, between 2 % and 50 %. (C) 2004 Elsevier B.V. All rights reserved.
机译：我们已经使用二氯硅烷+锗烷+盐酸化学方法在20 Torr下研究了SiGe的高温生长动力学。添加HCl在850摄氏度时会导致SiGe层中锗含量x的轻微增加。它对F（GeH4）/ F（SiH2Cl1）质量流量比的依赖性可以通过ax /（1-x）= m（F（GeH4）/ F（SiH2Cl2）关系很好地解释，其中m从2.41（无HCl）增加）到2.77（F（HCl）/ F（H-2）= 0.00833）。SiGe的生长速率略有增加，然后随着GeH4流量的增加而稳定，这归因于低GeH4流量是由氢引起的氢解吸增加在生长表面上存在Ge原子，从而释放了进入的Ge和Si原子的成核位点对于高GeH4流量，我们处于850℃的供应受限状态下，其生长速度受制于气态前体的数量限制在850℃下加入一些HCl导致SiGe的生长速率大大降低，生长温度在750℃至950℃之间对SiGe生长动力学的影响可以描述如下：（i）在给定的条件下，Ge浓度降低随着生长温度的升高，SiH2Cl2和GeH4的量也增加（至少对于Ge co小于或等于25％的ntents，这由m参数值从2.43（800摄氏度降低到1.71（950摄氏度））反映出来。 （ii）SiGe的生长速率随GeH4和/或生长温度的升高而增加；对于高GeH4流量和/或高温，我们处于供应受限的状态，而对于低GeH4流量和/或低温，我们处于表面氢解吸受限的状态。利用SiH2Cl2和GeH4流量的绝对值（为了获得低和高F（GeH4）/ F（SiH2Cl2）+ F（GeH4）质量流量比）和生长温度，我们已经能够获得2％至50％的非常大的Ge浓度范围。 （C）2004 Elsevier B.V.保留所有权利。

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