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首页> 外文期刊>Journal of Crystal Growth >Study on epitaxial silicon thin film solar cells on low cost silicon ribbon substrates
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Study on epitaxial silicon thin film solar cells on low cost silicon ribbon substrates

机译：低成本硅带衬底上外延硅薄膜太阳能电池的研究

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摘要

Heavily B-doped silicon ribbons were prepared by modified silicon sheets from powder (SSP) technique using 9 N purity electronic-grade silicon powder. Utilizing the SSP ribbons as substrates, crystalline silicon thin film (CSiTF) solar cells have been fabricated by direct epitaxy method. As-prepared CSiTF solar cells were characterized by illuminated and dark Ⅰ-Ⅴ characteristic measurement, Suns-Ⅴ_(oc) measurement, quantum efficiency (QE) and reflectance measurement. The results show that the CSiTF solar cells have poor performance with typical efficiency η only about 4.25%, and nearly all the characteristic parameters are far away from the ideal values. By detailed analysis and discussion on the measured results, it was found that grain boundary (GB) recombination in the active layers and electrical leakage at the edge of the PN junctions play a major role in deteriorating the performance of the CSiTF solar cells, which lead to higher dark saturation current I_s and lower parallel resistance R_(sh), respectively. By improving the preparation process, such as optimization of the epitaxy process, use of remote plasma hydrogen passivation (RPHP), optimization of the metallization and use of double layer anti-reflection (DLAR) coatings, etc., all the characteristic parameters of the CSiTF solar cells have been greatly improved, and the best efficiency value increased to 8.02%.
机译：通过使用9 N纯度电子级硅粉通过粉末改性（SSP）技术的硅片制备重掺杂B的硅带。利用SSP带作为衬底，通过直接外延方法制造了晶体硅薄膜（CSiTF）太阳能电池。制备的CSiTF太阳能电池通过光照和暗黑的Ⅰ-Ⅴ特性测量，Suns-Ⅴ_（oc）测量，量子效率（QE）和反射率测量来表征。结果表明，CSiTF太阳能电池的性能较差，典型效率η仅为4.25％左右，几乎所有特性参数均偏离理想值。通过对测量结果的详细分析和讨论，发现活性层中的晶界（GB）重组和PN结边缘的漏电在降低CSiTF太阳能电池性能方面起着重要作用，这导致分别达到较高的暗饱和电流I_s和较低的并联电阻R_（sh）。通过改进制备工艺，例如外延工艺的优化，远程等离子体氢钝化（RPHP）的使用，金属化的优化以及双层抗反射（DLAR）涂层的使用等，这些工艺的所有特征参数CSiTF太阳能电池得到了极大的改进，最佳效率值提高到8.02％。

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